公开(公告)号：US20230180641A1

公开(公告)日：2023-06-08

申请号：US18071740

申请日：2022-11-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Zhe WU ,  Taeguen KIM ,  Jeonghee PARK ,  Taehyeong KIM ,  Minji YU

IPC: H10N70/20 ,  H10N70/00 ,  H10B63/00 ,  G11C13/00

CPC classification number: H01L45/06 ,  H01L45/1226 ,  H01L27/2472 ,  G11C13/0011 ,  G11C13/0026 ,  G11C13/0028

Abstract: A variable resistance memory device includes a substrate, a first conductive line on the substrate, the first conductive line extending in a first horizontal direction, a second conductive line extending on the first conductive line in a second horizontal direction perpendicular to the first horizontal direction, and a memory cell at an intersection between the first conductive line and the second conductive line, the memory cell having a selection element layer, an intermediate electrode layer, and a variable resistance layer, and the variable resistance layer having a shape of stairs with a concave center.