公开(公告)号：US10121983B2

公开(公告)日：2018-11-06

申请号：US15420877

申请日：2017-01-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Taeho Shin

IPC: H01L29/06 ,  H01L51/50

Abstract: A light-emitting device is provided. The light-emitting device includes a first electrode structure, a light-emitting layer disposed on the first electrode structure, a second electrode structure disposed on the light-emitting layer, and a plurality of nano-particles disposed within the light-emitting layer. Each of the nano-particles includes a metal core and a dielectric shell that surrounds the metal core to generate plasmon resonance.

公开(公告)号：US09905790B2

公开(公告)日：2018-02-27

申请号：US15091650

申请日：2016-04-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Weonkyu Koh ,  Taeho Shin ,  Kyungsang Cho

IPC: H01L51/50 ,  H01L51/42

CPC classification number: H01L51/502 ,  H01L51/426 ,  H01L51/4273 ,  H01L51/5072 ,  H01L51/5088 ,  H01L51/5096 ,  H01L2251/305 ,  Y02E10/549

Abstract: Provided are optoelectronic devices including quantum dots. An optoelectronic device may include an active layer including a quantum dot and at least one molecular interlayer adjacent to the active layer. The active layer may be provided between two electrodes, and a charge transfer layer may be provided adjacent to the active layer. The molecular interlayer may be provided between the active layer and the charge transfer layer. The molecular interlayer may have a smaller amount of surface charge than the charge transfer layer. The molecular interlayer may include a nonionic material or a hydrophobic material. The charge transfer layer may include an electron transport layer, and the electron transport layer may include an inorganic semiconductor.