公开(公告)号：US20200251527A1

公开(公告)日：2020-08-06

申请号：US16512627

申请日：2019-07-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hee-Ju Shin ,  Ung-Hwan PI

IPC: H01L27/22 ,  H01L43/10 ,  H01L43/02 ,  G11C11/15 ,  G11C11/16

Abstract: An MRAM device includes a first conductive pattern including a material generating a spin orbital torque, a torque transfer pattern contacting a portion of an upper surface of the first conductive pattern, an insulation pattern on a side of the torque transfer pattern and covering the first conductive pattern, and a magnetic tunnel junction (MTJ) structure on the torque transfer pattern, the MTJ structure including a free layer pattern, a tunnel barrier pattern, and a fixed layer pattern sequentially stacked.