公开(公告)号：US20250164873A1

公开(公告)日：2025-05-22

申请号：US18776692

申请日：2024-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yonghoon Moon ,  Honggu Im ,  Suk Koo Hong ,  Hana Kim ,  Sungan Do

IPC: G03F7/004 ,  G03F7/38 ,  H01L21/768

Abstract: A photoresist composition and a method of manufacturing an integrated circuit device using the photoresist composition includes an organometallic compound including a central metal and at least one organic ligand bonded to the central metal, and a solvent, wherein the at least one organic ligand included in the organometallic compound includes an ylide group including an atom with a formal charge of −1 coordinately bonded to the central metal and a hetero atom with a formal charge of +1 bonded to the atom with a formal charge of −1.

公开(公告)号：US20250102914A1

公开(公告)日：2025-03-27

申请号：US18639380

申请日：2024-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Honggu Im ,  Yonghoon Moon ,  Jeongju Park ,  Jicheol Park ,  Giyoung Song

IPC: G03F7/039 ,  C08F212/14 ,  C08F220/38 ,  C08F228/02 ,  G03F7/038 ,  H01L21/027

Abstract: Photoresist compositions and methods of manufacturing an integrated circuit device by using said photoresist compositions are described. The photoresist compositions may include a photosensitive polymer, a photoacid generator (PAG), and a solvent, wherein the photosensitive polymer contains a sulfonate group (—SO2O—) bonded with an α-trifluoromethylbenzyl group.