公开(公告)号：US20180212147A1

公开(公告)日：2018-07-26

申请号：US15637357

申请日：2017-06-29

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Ricardo RUIZ ,  Jeffrey LILLE ,  Mac D. APODACA ,  Derek STEWART ,  Lei WAN ,  Bruce TERRIS

IPC: H01L45/00

CPC classification number: H01L45/1641 ,  H01L27/249 ,  H01L45/06 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/14 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1608

Abstract: Resistive memory cells containing nanoparticles are formed between two electrodes. The nanoparticles may be embedded in a matrix or sintered together without a matrix. The memory cells may be projected memory cells or barrier modulated cells. Polymeric ligands may be used to deposit the nanoparticles over a substrate, followed by an optional removal or replacement of the polymeric ligands.