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    SPIN ORBIT TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY CONTAINING SHIELDING ELEMENT AND METHOD OF MAKING THEREOF
    2.
    发明申请
    SPIN ORBIT TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY CONTAINING SHIELDING ELEMENT AND METHOD OF MAKING THEREOF 审中-公开

    公开(公告)号：US20200006633A1

    公开(公告)日：2020-01-02

    申请号：US16024490

    申请日：2018-06-29

    Applicant: SANDISK TECHNOLOGIES LLC

    Inventor： Jeffrey LILLE

    IPC: H01L43/02 ,  H01L27/22 ,  G11C11/16 ,  H01L43/12

    Abstract: A Magnetoresistive Random Access Memory (MRAM) assembly includes a substrate, a plurality of MRAM cells, a plurality of bit lines, each bit line magnetically coupled to one of the plurality of MRAM cells, a plurality of word lines, each word line magnetically coupled to one of the plurality of MRAM cells, a first planar ferromagnetic shielding component located vertically above the substrate such that the plurality of bit lines and the plurality of word lines are located between the first planar ferromagnetic shielding component and the substrate, and a first insulating layer located between the first ferromagnetic shielding component and one of the bit lines or word lines such that the bit lines or word lines are not electrically connected to the first ferromagnetic shielding component.

    MEMORY DEVICE CONTAINING DUAL ETCH STOP LAYERS FOR SELECTOR ELEMENTS AND METHOD OF MAKING THE SAME
    3.
    发明申请
    MEMORY DEVICE CONTAINING DUAL ETCH STOP LAYERS FOR SELECTOR ELEMENTS AND METHOD OF MAKING THE SAME 有权

    公开(公告)号：US20210408114A1

    公开(公告)日：2021-12-30

    申请号：US16910799

    申请日：2020-06-24

    Applicant: SANDISK TECHNOLOGIES LLC

    Inventor： Jeffrey LILLE ,  Kanaiyalal PATEL

    IPC: H01L27/22 ,  H01L43/12 ,  H01L43/02

    Abstract: A refractory metal-containing etch stop layer, a ruthenium etch stop layer, and a conductive material layer can be sequentially formed over an electrode layer and a selector material layer. A sequence of anisotropic etch processes can be employed to etch the conductive material layer selective to the ruthenium etch stop layer, to etch the ruthenium etch stop layer selective to the refractory metal-containing etch stop layer, and to etch the refractory metal-containing etch stop layer within minimal overreach into the electrode layer. The selector material layer can be subsequently anisotropically etched without exposure to the plasma of etchant gases for etching the refractory metal-containing etch stop layer and the conductive material layer, which may include a fluorine-containing plasma that can damage the selector material.

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