公开(公告)号：US20250133906A1

公开(公告)日：2025-04-24

申请号：US18574564

申请日：2022-07-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hidetomo KOBAYASHI ,  Yuki OKAMOTO ,  Toshihiko SAITO ,  Tatsuya ONUKI ,  Hidekazu MIYAIRI ,  Ryo TAGASHIRA ,  Kazuko YAMAWAKI ,  Masami ENDO

IPC: H10K59/121 ,  G09G3/3233 ,  H10K59/131

Abstract: A semiconductor device with high manufacturing yield is provided. The semiconductor device includes a plurality of subpixels. Each of the subpixels includes a first transistor, a second transistor, a first capacitor to a third capacitor, a first insulating layer, and a wiring. Each of the first capacitor to the third capacitor includes a first conductive layer, a second conductive layer, and a second insulating layer sandwiched between the first conductive layer and the second conductive layer. The first insulating layer is provided over the first transistor and the second transistor. The first conductive layers of the first capacitor to the third capacitor and the wiring are each provided over the first insulating layer. In a top view, the proportion of the total area of the first conductive layers of the first capacitor to the third capacitor and the wiring to the area of the subpixel is greater than or equal to 15 percent. The area of the first conductive layer of the second capacitor and the area of the first conductive layer of the third capacitor are each greater than or equal to twice the area of the first conductive layer of the first capacitor.