公开(公告)号：US20230378394A1

公开(公告)日：2023-11-23

申请号：US18200356

申请日：2023-05-22

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Dae Hong MIN ,  Jun Ho YOON ,  Woo Cheol GWAK ,  Jin Woo HUH ,  Yong Hyun BAEK

IPC: H01L33/10

CPC classification number: H01L33/10

Abstract: A light emitting device includes a substrate; a pattern of a plurality of protrusions protruding from the substrate; a first semiconductor layer provided on the substrate; an active layer provided on the first semiconductor layer; and a second semiconductor layer provided on the active layer, in which each of the protrusions includes a first layer formed integrally with the substrate and protruding from an upper surface of the base substrate; and a second layer provided on the first layer and formed of a material different from that of the first layer.

公开(公告)号：US20210074883A1

公开(公告)日：2021-03-11

申请号：US17025254

申请日：2020-09-18

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Dae Hong MIN ,  Jun Ho YOON ,  Woo Cheol GWAK ,  Jin Woo HUH ,  Yong Hyun BAEK

IPC: H01L33/10

Abstract: A light emitting device includes a substrate; a pattern of a plurality of protrusions protruding from the substrate; a first semiconductor layer provided on the substrate; an active layer provided on the first semiconductor layer; and a second semiconductor layer provided on the active layer, in which each of the protrusions includes a first layer formed integrally with the substrate and protruding from an upper surface of the base substrate; and a second layer provided on the first layer and formed of a material different from that of the first layer.

公开(公告)号：US20250107280A1

公开(公告)日：2025-03-27

申请号：US18970020

申请日：2024-12-05

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Dae Hong MIN ,  Jun Ho YOON ,  Woo Cheol GWAK ,  Jin Woo HUH ,  Yong Hyun BAEK

IPC: H01L33/10 ,  H01L33/22

Abstract: A light emitting device includes a substrate; a pattern of a plurality of protrusions protruding from the substrate; a first semiconductor layer provided on the substrate; an active layer provided on the first semiconductor layer; and a second semiconductor layer provided on the active layer, in which each of the protrusions includes a first layer formed integrally with the substrate and protruding from an upper surface of the base substrate; and a second layer provided on the first layer and formed of a material different from that of the first layer.