公开(公告)号：US20190237623A1

公开(公告)日：2019-08-01

申请号：US16331015

申请日：2017-09-11

申请人： LG INNOTEK CO., LTD.

发明人： Youn Joon SUNG ,  Min Sung KIM ,  Eun Dk LEE

IPC分类号： H01L33/38 ,  H01L33/32 ,  H01L33/12

CPC分类号： H01L33/38 ,  H01L33/00 ,  H01L33/10 ,  H01L33/12 ,  H01L33/14 ,  H01L33/22 ,  H01L33/32 ,  H01L33/36 ,  H01L33/48 ,  H01L33/62 ,  H01S5/227

摘要： An embodiment includes a semiconductor device including a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first insulation layer disposed on the semiconductor structure; a first electrode disposed on the first conductive semiconductor layer; a second electrode disposed on the second conductive semiconductor layer; a first cover electrode disposed on the first electrode; a second cover electrode disposed on the second electrode; and a second insulation layer extending from an upper surface of the first cover electrode to an upper surface of the second cover electrode. The semiconductor structure includes a first surface extending from an upper surface of the first conductive semiconductor layer where the first electrode is disposed to a side surface of the active layer and an upper surface of the second conductive semiconductor where the second electrode is disposed. The first insulation layer is disposed on the first surface to be spaced apart from the first electrode. The first insulation layer is disposed on the first surface to overlap with the first cover electrode in a first direction perpendicular to the upper surface of the first conductive semiconductor layer.

公开(公告)号：US20190214374A1

公开(公告)日：2019-07-11

申请号：US16352792

申请日：2019-03-13

申请人： Genesis Photonics Inc.

发明人： Yi-Ru Huang ,  Tung-Lin Chuang ,  Chih-Ming Shen ,  Sheng-Tsung Hsu ,  Kuan-Chieh Huang ,  Jing-En Huang

IPC分类号： H01L25/075 ,  H01L33/10 ,  H01L33/56 ,  H01L33/46 ,  H01L33/50 ,  H01L33/52 ,  H01L33/62 ,  H01L33/58 ,  H01L33/42 ,  H01L33/20 ,  H01L33/38 ,  H01L33/40

CPC分类号： H01L25/0753 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/20 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/507 ,  H01L33/52 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2924/00014

摘要： A light emitting component includes an epitaxial structure, an adhesive layer, a first reflective layer, a second reflective layer, a block layer, a first electrode and a second electrode. The epitaxial structure includes a substrate, a first semiconductor layer, a light emitting layer and a second semiconductor layer. The adhesive layer is disposed on the second semiconductor layer of the epitaxial structure. The first reflective layer is disposed on the adhesive layer. The second reflective layer is disposed on the first reflective layer and extended onto the adhesive layer. A projection area of the second reflective layer is larger than a projection area of the first reflective layer. The block layer is disposed on the second reflective layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer.

公开(公告)号：US20190103729A1

公开(公告)日：2019-04-04

申请号：US16194914

申请日：2018-11-19

申请人： Palo Alto Research Center Incorporated

发明人： Thomas Wunderer ,  Noble M. Johnson

IPC分类号： H01S5/343 ,  H01S5/323 ,  H01S5/04 ,  H01S5/125 ,  H01S5/02 ,  H01L33/16 ,  H01S5/32 ,  H01L33/32

CPC分类号： H01S5/3202 ,  H01L33/10 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0205 ,  H01S5/04 ,  H01S5/125 ,  H01S5/3013 ,  H01S5/305 ,  H01S5/32341 ,  H01S5/343 ,  H01S5/34333 ,  H01S2304/04

摘要： An ultraviolet (UV) radiation emitting device includes an epitaxial heterostructure comprising an AlGaInN active region. The AlGaInN active region includes one or more quantum well structures with Al content greater than about 50% and having a non-c-plane crystallographic growth orientation. The AlGaInN active region is configured to generate UV radiation in response to excitation by an electron beam generated by an electron beam pump source.

公开(公告)号：US20190088843A1

公开(公告)日：2019-03-21

申请号：US16307429

申请日：2017-06-06

申请人： PLESSEY SEMICONDUCTORS LIMITED

发明人： Zainul Fiteri ,  Keith Strickland

IPC分类号： H01L33/62 ,  H01L33/10 ,  H01L33/60 ,  H01L33/64 ,  H01L33/50 ,  H01L33/00 ,  H01L33/32

CPC分类号： H01L33/62 ,  H01L33/007 ,  H01L33/10 ,  H01L33/32 ,  H01L33/486 ,  H01L33/502 ,  H01L33/505 ,  H01L33/60 ,  H01L33/64 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2933/0075

摘要： An LED package for connection to a heat sink, the LED package comprising an LED structure having a first surface for emitting light and an opposite second surface, the LED structure comprising a light producing layer and a reflective layer, wherein the reflective layer is provided between the light producing layer and the second surface, whereby light is reflected by the reflective layer to the first surface, the first surface further comprising first and second electrical contacts. A frame overlaps the periphery of the first surface of the LED structure and has an aperture for emitting light from the first surface, the frame comprising first and second vias for connection to an external electrical circuit, the first and second vias are soldered to the first and second electrical contacts of the LED structure respectively.

公开(公告)号：US20180269361A1

公开(公告)日：2018-09-20

申请号：US15916725

申请日：2018-03-09

申请人： NICHIA CORPORATION

发明人： Hirosuke HAYASHI

IPC分类号： H01L33/50 ,  H01L33/40 ,  H01L33/38 ,  H01L33/10

CPC分类号： H01L33/501 ,  H01L33/10 ,  H01L33/38 ,  H01L33/40 ,  H01L33/486 ,  H01L33/505 ,  H01L33/58 ,  H01L2933/0041 ,  H01L2933/0091

摘要： A light emitting device includes a light emitting element, a transmissive member, and a light reflective member. The transmissive member is arranged on the light emitting element, and has a wavelength conversion member and a film. The film constitutes at least a part of an outermost surface of a side surface of the transmissive member. A surface free energy of a base material of the film is lower than a surface free energy of a base material of the wavelength conversion layer. The light reflective member encloses a side surface of the light emitting element and the side surface of the transmissive member while a top surface of the transmissive member is exposed from the light reflective member.

公开(公告)号：US20180269182A1

公开(公告)日：2018-09-20

申请号：US15984499

申请日：2018-05-21

申请人： Genesis Photonics Inc.

发明人： Cheng-Wei Hung ,  Yu-Feng Lin

IPC分类号： H01L25/065 ,  H01L23/60 ,  H01L33/48 ,  H01L33/64 ,  H01L25/075 ,  H01L27/02 ,  H01L27/15 ,  H01L29/866 ,  H01L33/08 ,  H01L33/10 ,  H01L33/60 ,  H01L23/00 ,  H01L33/52 ,  H01L33/50 ,  H01L33/56

CPC分类号： H01L25/0655 ,  H01L23/562 ,  H01L23/60 ,  H01L25/0657 ,  H01L25/0753 ,  H01L25/0756 ,  H01L27/0248 ,  H01L27/15 ,  H01L29/866 ,  H01L33/08 ,  H01L33/10 ,  H01L33/48 ,  H01L33/486 ,  H01L33/50 ,  H01L33/502 ,  H01L33/508 ,  H01L33/52 ,  H01L33/56 ,  H01L33/60 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/18161 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2924/00014

摘要： A light-emitting device is provided. The light-emitting device includes a substrate having a long edge and a short edge, at least one electrode pad assembly, and at least one light-emitting element. The at least one electrode pad assembly is disposed on the substrate and includes a first electrode pad and a second electrode pad. The at least one light-emitting element has a plurality of electrodes electrically connected to the first electrode pad and the second electrode pad of the at least one electrode pad assembly. The first electrode pad and the second electrode pad are arranged along a direction parallel to the short side.

公开(公告)号：US10079329B2

公开(公告)日：2018-09-18

申请号：US15522783

申请日：2015-10-20

申请人： OSRAM Opto Semiconductors GmbH

发明人： Fabian Kopp ,  Christian Eichinger ,  Korbinian Perzlmaier

IPC分类号： H01L33/00 ,  H01L33/42 ,  H01L33/10 ,  H01L33/38 ,  H01L33/24 ,  H01L33/32

CPC分类号： H01L33/42 ,  H01L33/10 ,  H01L33/24 ,  H01L33/325 ,  H01L33/38 ,  H01L33/46

摘要： According to the present disclosure, optoelectronic semiconductor chip includes at least one n-doped semiconductor layer, at least one p-doped semiconductor layer and one active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer. The p-doped semiconductor layer is electrically contacted by means of a first metallic connection layer, and a reflection-enhancing dielectric layer sequence is arranged between the p-doped semiconductor layer and the first connection layer, which dielectric layer sequence includes a plurality of dielectric layers with different refractive indices.

公开(公告)号：US10032961B2

公开(公告)日：2018-07-24

申请号：US15716452

申请日：2017-09-26

申请人： ROHM CO., LTD.

发明人： Masakazu Takao ,  Mitsuhiko Sakai ,  Kazuhiko Senda

IPC分类号： H01L33/00 ,  H01L33/46 ,  H01L33/62 ,  H01L33/48 ,  H01L33/04 ,  H01L33/06 ,  H01L33/10 ,  H01L33/14 ,  H01L33/22 ,  H01L33/30 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/60

CPC分类号： H01L33/46 ,  H01L33/0025 ,  H01L33/04 ,  H01L33/06 ,  H01L33/10 ,  H01L33/145 ,  H01L33/22 ,  H01L33/30 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L33/42 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62

摘要： A semiconductor light emitting device includes a conductive substrate and a first metal layer disposed on the substrate. The first metal layer is formed so as to be electrically connected with the substrate, and the first metal layer includes an Au based material. A joining layer is formed on the first metal layer. The joining layer includes a second metal layer including Au and a third metal layer including Au. A metallic contact layer and an insulating layer are formed on the joining layer. A semiconductor layer is formed on the metallic contact layer and the insulating layer and includes a red-based light emitting layer. An electrode is formed on the semiconductor layer and is made of metal. The insulating layer includes a patterned aperture, and at least a part of the metallic contact layer is formed in the aperture.

公开(公告)号：US10032959B2

公开(公告)日：2018-07-24

申请号：US15451103

申请日：2017-03-06

申请人： LG INNOTEK CO., LTD.

发明人： Myung Cheol Yoo

IPC分类号： H01L33/00 ,  H01L33/32 ,  H01L33/62 ,  H01L33/42 ,  H01L33/12 ,  H01L33/06 ,  H01L33/10 ,  H01L33/46 ,  H01S5/30 ,  H01L33/40

CPC分类号： H01L33/325 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/10 ,  H01L33/12 ,  H01L33/32 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01S5/3013

摘要： A light emitting device can include a GaN layer having a multilayer structure that can include an n-type layer, an active layer, and a p-type layer, the GaN layer having a first surface and a second surface; a conductive structure on the first surface of the GaN layer, the conductive structure includes a first electrode in contact with the first surface of the GaN layer, the first electrode is configured to reflect light from the active layer back through the second surface of the GaN layer; and a metal layer including Au, in which the metal layer serves as a first pad; a second electrode on the second surface of the GaN layer; and a second pad on the second electrode, in which a thickness of the second pad is about 0.5 μm or higher.

公开(公告)号：US20180206303A1

公开(公告)日：2018-07-19

申请号：US15863766

申请日：2018-01-05

申请人： OSRAM Opto Semiconductors GmbH

发明人： Ulrich STREPPEL ,  Siegfried HERRMANN

IPC分类号： H05B33/08

CPC分类号： H05B33/0827 ,  G02B27/0955 ,  G02B27/0977 ,  H01L25/0756 ,  H01L33/10 ,  H01L2933/0033 ,  H05B33/0842 ,  H05B33/0845

摘要： In one embodiment, the lighting device (1) comprises at least one base chip (21) and a plurality of cover emitter regions (22). The base chip or chips (21) and the cover emitter regions (22) are realized by light-emitting diode chips and can be electrically controlled independently of one another. Main emission directions (M) of these light-emitting diode chips are oriented parallel to one another. The cover emitter regions (22) are partially overlapping with the at least one base chip (21), so that an overlap region (3, B) is formed and the at least one base chip (21) radiates through the cover emitter regions (22) during operation. The cover emitter regions (22) are arranged in a common plane perpendicular to the main emission directions (M).