公开(公告)号：US20230098895A1

公开(公告)日：2023-03-30

申请号：US18077273

申请日：2022-12-08

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Dae Hong MIN ,  Yong Hyun BAEK ,  Ji Hun KANG

IPC: H01L33/32 ,  H01L33/62 ,  H01L33/10

Abstract: A light emitting diode according to an exemplary embodiment of the present disclosure includes: a first conductivity type nitride semiconductor layer; a V-pit generation layer disposed on the n-type nitride semiconductor layer and having a V-pit; a lower active layer disposed on the V-pit generation layer; an upper active layer disposed on the lower active layer; an intermediate layer disposed between the lower active layer and the upper active layer; a second conductivity type nitride semiconductor layer disposed on the upper active layer, an upper step coverage layer disposed between the second conductivity type semiconductor layer and the upper active layer; and a lower step coverage layer disposed between the intermediate layer and the lower active layer, in which in an electroluminescence spectrum, the light emitting diode emits light having a highest peak intensity in a wavelength range of 500 nm or more in a visible light region.

公开(公告)号：US20220262983A1

公开(公告)日：2022-08-18

申请号：US17673068

申请日：2022-02-16

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chung Hoon LEE ,  Yong Hyun BAEK ,  Ji Hun KANG ,  Dae Hong MIN ,  Dae Sung CHO ,  So Ra LEE

IPC: H01L33/24 ,  H01L33/32 ,  H01L33/08

Abstract: A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer disposed on the n-type nitride semiconductor layer and having V-pits, an active layer disposed on the V-pit generation layer and including a first well region formed along a flat surface of the V-pit generation layer and a second well region formed in the V-pit of the V-pit generation layer, a p-type nitride semiconductor layer disposed on the active layer and a sub-emission layer interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer and disposed near the active layer. The sub-emission layer may emit light having a peak wavelength within a range of wavelengths shorter than a peak wavelength of the first well region, and light emitted from the light emitting diode is within a range of 0.205≤X≤0.495 and 0.265≤Y≤0.450 in CIE color coordinates (X, Y).

公开(公告)号：US20220216188A1

公开(公告)日：2022-07-07

申请号：US17569114

申请日：2022-01-05

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Yong Hyun BAEK ,  Dae Hong MIN ,  Ji Hun KANG ,  Chung Hoon LEE

IPC: H01L25/075 ,  H01L33/50 ,  H01L33/04 ,  H01L33/62 ,  H01L33/48

Abstract: A light emitting device and a light emitting module having the same are provided. The light emitting module includes a circuit board and a plurality of light emitting units arranged on the circuit board. Each of the plurality of light emitting units includes a light emitting device. The plurality of light emitting units emits light of different colors from one another.

公开(公告)号：US20250107280A1

公开(公告)日：2025-03-27

申请号：US18970020

申请日：2024-12-05

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Dae Hong MIN ,  Jun Ho YOON ,  Woo Cheol GWAK ,  Jin Woo HUH ,  Yong Hyun BAEK

IPC: H01L33/10 ,  H01L33/22

Abstract: A light emitting device includes a substrate; a pattern of a plurality of protrusions protruding from the substrate; a first semiconductor layer provided on the substrate; an active layer provided on the first semiconductor layer; and a second semiconductor layer provided on the active layer, in which each of the protrusions includes a first layer formed integrally with the substrate and protruding from an upper surface of the base substrate; and a second layer provided on the first layer and formed of a material different from that of the first layer.

公开(公告)号：US20230215846A1

公开(公告)日：2023-07-06

申请号：US18088650

申请日：2022-12-26

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Dae Hong MIN ,  Yong Hyun BAEK ,  Ji Hun KANG ,  Chung Hoon LEE

IPC: H01L25/075 ,  H01L33/06

CPC classification number: H01L25/0753 ,  H01L33/06 ,  H01L33/32

Abstract: A light emitting device according to an exemplary embodiment includes a first light emission region and a second light emission region. The first and second light emission regions include a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active region formed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively, an area of the first light emission region is larger than an area of the second emission region, and at least one of the first emission region or the second emission region emits light of a plurality of peak wavelengths.

公开(公告)号：US20220367752A1

公开(公告)日：2022-11-17

申请号：US17740856

申请日：2022-05-10

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Dae Hong MIN ,  Yong Hyun BAEK ,  Ji Hun KANG

IPC: H01L33/12 ,  H01L33/24 ,  H01L33/06

Abstract: A light emitting diode includes a first conductivity type nitride semiconductor layer, a V-pit generation layer disposed on the first conductivity type nitride semiconductor layer and having V-pits, an active layer disposed on the V-pit generation layer, a stress relief layer disposed between the V-pit generation layer and the active layer, and a second conductivity type nitride semiconductor layer disposed on the active layer. The stress relief layer and the active layer may be formed in the V-pits, as well as on a flat surface of the V-pit generation layer, and the active layer may emit light of a multi-band spectrum.

公开(公告)号：US20230378394A1

公开(公告)日：2023-11-23

申请号：US18200356

申请日：2023-05-22

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Dae Hong MIN ,  Jun Ho YOON ,  Woo Cheol GWAK ,  Jin Woo HUH ,  Yong Hyun BAEK

IPC: H01L33/10

CPC classification number: H01L33/10

Abstract: A light emitting device includes a substrate; a pattern of a plurality of protrusions protruding from the substrate; a first semiconductor layer provided on the substrate; an active layer provided on the first semiconductor layer; and a second semiconductor layer provided on the active layer, in which each of the protrusions includes a first layer formed integrally with the substrate and protruding from an upper surface of the base substrate; and a second layer provided on the first layer and formed of a material different from that of the first layer.

公开(公告)号：US20210074883A1

公开(公告)日：2021-03-11

申请号：US17025254

申请日：2020-09-18

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Dae Hong MIN ,  Jun Ho YOON ,  Woo Cheol GWAK ,  Jin Woo HUH ,  Yong Hyun BAEK

IPC: H01L33/10

Abstract: A light emitting device includes a substrate; a pattern of a plurality of protrusions protruding from the substrate; a first semiconductor layer provided on the substrate; an active layer provided on the first semiconductor layer; and a second semiconductor layer provided on the active layer, in which each of the protrusions includes a first layer formed integrally with the substrate and protruding from an upper surface of the base substrate; and a second layer provided on the first layer and formed of a material different from that of the first layer.

公开(公告)号：US20230335673A1

公开(公告)日：2023-10-19

申请号：US18120168

申请日：2023-03-10

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Dae Hong MIN ,  Yong Hyun BAEK ,  Ji Hun KANG

IPC: H01L33/14 ,  H01L33/62 ,  H01L33/06

CPC classification number: H01L33/145 ,  H01L33/62 ,  H01L33/06 ,  H01L25/0753

Abstract: A light emitting diode and a light emitting device having the same, in which the light emitting diode can include a first conductivity type semiconductor layer; a second conductivity type semiconductor layer; a lower active layer disposed there between; and an upper active layer disposed between the lower active layer and the second conductivity type semiconductor layer. The lower active layer can emit light having a wavelength shorter than that of the upper active layer, the upper active layer can include a plurality of well layers and a plurality of barrier layers, at least one of the plurality of barrier layers can include a first barrier layer and a second barrier layer having an n-type impurity doping concentration lower than that of the first barrier layer, and the first barrier layer can be closer to the first conductivity type semiconductor layer than the second barrier layer.

公开(公告)号：US20230093367A1

公开(公告)日：2023-03-23

申请号：US18070551

申请日：2022-11-29

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Yong Hyun BAEK ,  Dae Hong MIN ,  Ji Hun KANG ,  Chung Hoon LEE

IPC: H01L33/06 ,  H01L25/16 ,  H01L33/22

Abstract: A light emitting device and a light emitting module having the same are provided. A light emitting device includes: a first conductivity type semiconductor layer; a second conductivity type semiconductor layer; and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, in which, upon operation, the active layer emits light of a first peak wavelength and light of a second peak wavelength in which the first peak wavelength may be within a range of about 400 nm to about 415 nm, and the second peak wavelength may be greater than or equal to about 440 nm.