公开(公告)号：US20230395752A1

公开(公告)日：2023-12-07

申请号：US18230616

申请日：2023-08-04

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ju Yong Park ,  Seong Gyu JANG ,  Kyu Ho LEE ,  Joon Hee

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/00 ,  H01L33/24

CPC classification number: H01L33/38 ,  H01L33/24 ,  H01L33/00 ,  H01L33/62

Abstract: An ultraviolet light-emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; a mesa disposed on the n-type semiconductor layer and including an active layer and a p-type semiconductor layer; an n-ohmic contact layer contacting the n-type semiconductor layer; a p-ohmic contact layer contacting the p-type semiconductor layer; an n-bump electrically connected to the n-ohmic contact layer; and a p-bump electrically connected to the p-ohmic contact layer, wherein the mesa includes a plurality of branches, the n-ohmic contact layer surrounds the mesa and is disposed in a region between the branches, each of the n-bump and the p-bump covers an upper surface and a side surface of the mesa, and the p-bump covers at least two of the branches among the plurality of branches. Therefore, an optical output can be increased by reducing light loss, and a forward voltage can be lowered.