公开(公告)号：US20240363817A1

公开(公告)日：2024-10-31

申请号：US18208353

申请日：2023-06-12

Applicant: EPISTAR CORPORATION

Inventor： Jia-Xing CHUNG ,  Wei-Shan HU ,  Ching-Tai CHENG ,  Shih-An LIAO

IPC: H01L33/62 ,  H01L33/38 ,  H01L33/40 ,  H01S5/042

CPC classification number: H01L33/62 ,  H01L33/38 ,  H01L33/40 ,  H01S5/04252 ,  H01S5/04254 ,  H01L33/20

Abstract: A semiconductor device includes a semiconductor stack, a protective layer on the semiconductor stack, an electrode on the semiconductor stack and electrically connected to the semiconductor stack, and a conductive bump on the electrode. The thickness of the conductive bump is measured from the topmost point of the conductive bump to the uppermost surface of the protective layer. The ratio of the thickness of the conductive bump to the maximum width of the conductive bump is between 0.1 and 0.4, and the electrode is devoid of gold.

公开(公告)号：US12132072B2

公开(公告)日：2024-10-29

申请号：US18329326

申请日：2023-06-05

Applicant: Samsung Display Co., LTD.

Inventor： Si Kwang Kim ,  Min Suk Ko ,  Kab Jong Seo ,  Yong Hoon Yang

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/38 ,  H01L33/40

CPC classification number: H01L27/156 ,  H01L33/005 ,  H01L33/38 ,  H01L33/40 ,  H01L2933/0016

Abstract: A display device and a method of fabricating the same are provided. The display device includes a substrate, a first electrode on the substrate, a second electrode on the substrate and spaced apart from the first electrode, a plurality of light emitting elements, at least a portion of each of which is between the first electrode and the second electrode, and contact electrodes on the first electrode, the second electrode and the light emitting elements, the contact electrodes including a conductive polymer, wherein the contact electrodes include a first contact electrode which contacts an end portion of a first portion of the light emitting elements and the first electrode and a second contact electrode which contacts an end portion of a second portion of the light emitting elements, and the second electrode and is spaced apart from the first contact electrode.

公开(公告)号：US20240339488A1

公开(公告)日：2024-10-10

申请号：US18745419

申请日：2024-06-17

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon CHAE ,  Chung Hoon LEE ,  Seong Gyu JANG ,  Chang Yeon KIM ,  Ho Joon LEE

IPC: H01L27/15 ,  G09G3/32 ,  H01L25/075 ,  H01L25/16 ,  H01L27/12 ,  H01L29/45 ,  H01L33/00 ,  H01L33/08 ,  H01L33/10 ,  H01L33/22 ,  H01L33/24 ,  H01L33/30 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/46 ,  H01L33/50 ,  H01L33/58 ,  H01L33/60 ,  H10K59/32 ,  H10K59/35 ,  H10K59/38 ,  H10K102/00

CPC classification number: H01L27/156 ,  H01L25/0756 ,  H01L33/10 ,  H01L33/30 ,  H01L33/405 ,  H01L33/504 ,  G09G3/32 ,  H01L25/167 ,  H01L27/1214 ,  H01L29/45 ,  H01L33/0008 ,  H01L33/0093 ,  H01L33/08 ,  H01L33/22 ,  H01L33/24 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/42 ,  H01L33/46 ,  H01L33/58 ,  H01L33/60 ,  H10K59/32 ,  H10K59/35 ,  H10K59/352 ,  H10K59/353 ,  H10K59/38 ,  H10K2102/00

Abstract: A light emitting diode (LED) pixel for a display including a first LED stack having a first well layer, a second LED stack disposed on the first LED stack and having a second well layer, a third LED stack disposed on the second LED stack and having a third well layer, a first electrode disposed on the first LED stack and in ohmic contact with the first LED stack, a second electrode disposed on the second LED stack and in ohmic contact with a surface of the second LED stack, and a third electrode in ohmic contact with a surface of the third LED stack, in which the first well layer includes at least one base material different from that of the second well layer.

公开(公告)号：US12113147B2

公开(公告)日：2024-10-08

申请号：US17859700

申请日：2022-07-07

Applicant: Samsung Display Co., LTD.

Inventor： Kang Soo Han ,  Ju Yong Kim ,  Ho Yong Shin ,  Gyeong Eun Eoh ,  Jun Hwi Lim

IPC: H01L33/00 ,  B41J2/175 ,  H01L27/15 ,  H01L33/24 ,  H01L33/38 ,  H01L33/44

CPC classification number: H01L33/005 ,  B41J2/17566 ,  H01L27/156 ,  H01L33/24 ,  H01L33/38 ,  H01L33/44 ,  H01L2933/0016

Abstract: A method for inkjet printing includes setting a target volume and a target concentration of ink discharged to a pixel, measuring a volume and a concentration of a liquid drop for each of nozzles, selecting first nozzle groups for achieving the target volume, from a volume pool of the liquid drop for each of the nozzles, selecting second nozzle groups for achieving the target concentration, from the first nozzle groups, selecting recipes by combining brightness trend lines, from the second nozzle groups, performing a printing simulation for each of the recipes to select a final recipe, and performing inkjet printing by using the final recipe.

公开(公告)号：US12100781B2

公开(公告)日：2024-09-24

申请号：US17562246

申请日：2021-12-27

Applicant: JADE BIRD DISPLAY (SHANGHAI) LIMITED

Inventor： Qiming Li ,  Yuankun Zhu ,  Anle Fang ,  Deshuai Liu

IPC: H01L33/06 ,  H01L25/075 ,  H01L27/15 ,  H01L33/02 ,  H01L33/04 ,  H01L33/10 ,  H01L33/20 ,  H01L33/38 ,  H01L33/46 ,  H01L33/50 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L33/36

CPC classification number: H01L33/06 ,  H01L25/0753 ,  H01L27/15 ,  H01L27/153 ,  H01L33/02 ,  H01L33/04 ,  H01L33/10 ,  H01L33/20 ,  H01L33/38 ,  H01L33/46 ,  H01L33/50 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L33/36

Abstract: A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, and the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs.

公开(公告)号：US20240304757A1

公开(公告)日：2024-09-12

申请号：US18575021

申请日：2022-03-01

Applicant: XIAMEN SILAN ADVANCED COMPOUND SEMICONDUCTOR CO., LTD.

Inventor： Weihong Fan ,  Jingfeng Bi ,  Maofang Guo ,  Shitao Li ,  Jinchao Zhao ,  Shiman Shi ,  Quanxin Jin

IPC: H01L33/32 ,  H01L25/075 ,  H01L33/00 ,  H01L33/06 ,  H01L33/10 ,  H01L33/14 ,  H01L33/38 ,  H01L33/62

CPC classification number: H01L33/32 ,  H01L25/0753 ,  H01L33/007 ,  H01L33/0093 ,  H01L33/06 ,  H01L33/10 ,  H01L33/14 ,  H01L33/38 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0066

Abstract: Disclosed is a vertical structure deep ultraviolet LED, a manufacturing method thereof and an epitaxial structure. The manufacturing method comprises: forming an epitaxial structure on a sapphire substrate, the epitaxial structure having a first surface and a second surface connected with the sapphire substrate; dividing the epitaxial structure into epitaxial units arranged in an array, a portion of the sapphire substrate being exposed between adjacent epitaxial units; forming an adhesive layer on a portion, which is exposed between adjacent epitaxial units, of the sapphire substrate; bonding a second substrate above the first surface of the epitaxial structure; performing laser lift-off on the sapphire substrate; and removing the adhesive layer. By dividing the epitaxial structure into epitaxial units arranged in an array, the manufacturing method alleviates the problem of serious damage to the epitaxial structure caused by strong impact generated at the moment of high energy density laser lift-off.

公开(公告)号：US12080832B2

公开(公告)日：2024-09-03

申请号：US17447265

申请日：2021-09-09

Applicant: BRIDGELUX, INC.

Inventor： Frank T. Shum ,  William W. So ,  Steven D. Lester

IPC: H01L33/46 ,  H01L33/06 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62

CPC classification number: H01L33/46 ,  H01L33/06 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62

Abstract: Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.

公开(公告)号：US20240290908A1

公开(公告)日：2024-08-29

申请号：US18625867

申请日：2024-04-03

Applicant: TIANJIN SANAN OPTOELECTRONICS CO., LTD.

Inventor： ChingYuan TSAI ,  Chun-Yi WU ,  Fulong LI ,  Duxiang WANG ,  Chaoyu WU ,  Wenhao GAO ,  Xiaofeng LIU ,  Weihuan LI ,  Liming SHU ,  Chao LIU

IPC: H01L33/00 ,  H01L33/30 ,  H01L33/38 ,  H01L33/40

CPC classification number: H01L33/0062 ,  H01L33/0093 ,  H01L33/30 ,  H01L33/38 ,  H01L33/405 ,  H01L2933/0016

Abstract: A light emitting device includes an epitaxial structure and first and second electrodes on a side of the epitaxial structure. The epitaxial structure includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer. The active layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The first electrode is disposed on the epitaxial structure to be electrically connected with the first-type semiconductor layer. The second electrode is disposed on the epitaxial structure to be electrically connected with the second-type semiconductor layer. The second electrode is in ohmic contact with a second-type window sublayer of the second-type semiconductor layer.

公开(公告)号：US12074260B2

公开(公告)日：2024-08-27

申请号：US18144594

申请日：2023-05-08

Applicant: LG DISPLAY CO., LTD.

Inventor： KyungMo Son ,  ShunYoung Yang

IPC: H01L27/14 ,  H01L27/15 ,  H01L29/786 ,  H01L33/12 ,  H01L33/38 ,  H01L33/40 ,  H01L33/48 ,  H01L33/62

CPC classification number: H01L33/486 ,  H01L27/156 ,  H01L29/7869 ,  H01L33/12 ,  H01L33/38 ,  H01L33/40 ,  H01L33/62

Abstract: A display device can include multiple layers, and a capacitor on the multiple layers. The capacitor can include one capacitor electrode and the other capacitor electrode, in which the one capacitor electrode is on a layer where a first gate electrode of a first thin film transistor is disposed on, and an electrode disposed on a layer where the other capacitor electrode is disposed on and made of same material with the other capacitor electrode overlaps a second thin film transistor. The display device can further include a first planarization layer and a second planarization layer on the first thin film transistor and the second thin film transistor, and a source electrode of the first thin film transistor between the first and second planarization layers.

公开(公告)号：US20240282887A1

公开(公告)日：2024-08-22

申请号：US18653040

申请日：2024-05-02

Applicant: TIANJIN SANAN OPTOELECTRONICS CO., LTD.

Inventor： Chunfu TSAI ,  Chihhung HSIAO

IPC: H01L33/06 ,  H01L33/22 ,  H01L33/30 ,  H01L33/38 ,  H01L33/48

CPC classification number: H01L33/06 ,  H01L33/22 ,  H01L33/30 ,  H01L33/38 ,  H01L33/486

Abstract: An infrared light-emitting diode (LED) includes a semiconductor light-emitting unit which includes an active layer, a first waveguide layer, a second waveguide layer, a first cladding layer and a second cladding layer. The active layer includes at least one pair of layers. Each pair of layers includes a well layer and a barrier layer. The first and the second waveguide layers are respectively disposed on two opposite sides of the active layer, and are independently made of a semiconductor compound represented by (AlX3Ga1-X3)Y1In1-Y1P, wherein 0≤X3≤1 and 0