公开(公告)号：US20230026927A1

公开(公告)日：2023-01-26

申请号：US17862933

申请日：2022-07-12

Applicant: SHOWA DENKO K.K.

Inventor： Tsubasa SHIONO ,  Yuichiro MABUCHI

IPC: H01L21/02 ,  H01L29/16 ,  H01L29/20

Abstract: A SiC epitaxial wafer includes a SiC substrate and an epitaxial layer laminated on the SiC substrate, wherein the epitaxial layer comprises a first layer, a second layer and a third layer in order from the SiC substrate side, the nitrogen concentration of the SiC substrate is 6.0×1018 cm−3 or more and 1.5×1019 cm−3 or less, the nitrogen concentration of the first layer is 1.0×1017 cm−3 or more and 1.5×1018 cm−3 or less, the nitrogen concentration of the second layer is 1.0×1018 cm−3 or more and 5.0×1018 cm−3 or less, and the nitrogen concentration of the third layer is 5.0×1013 cm−3 or more and 1.0×1017 cm−3 or less.