公开(公告)号：US20200181798A1

公开(公告)日：2020-06-11

申请号：US16705848

申请日：2019-12-06

Applicant: SHOWA DENKO K.K.

Inventor： Yuichiro MABUCHI ,  Keisuke FUKADA

IPC: C30B25/12 ,  C23C16/458 ,  C23C16/46 ,  C30B29/36 ,  C23C16/32 ,  H01L21/687

Abstract: A susceptor, including: a base portion having a first surface on which a wafer is placed, in which the base portion has a plurality of openings which penetrate through the base portion in a thickness direction and supply an Ar gas to a back surface of the wafer.

公开(公告)号：US20230026927A1

公开(公告)日：2023-01-26

申请号：US17862933

申请日：2022-07-12

Applicant: SHOWA DENKO K.K.

Inventor： Tsubasa SHIONO ,  Yuichiro MABUCHI

IPC: H01L21/02 ,  H01L29/16 ,  H01L29/20

Abstract: A SiC epitaxial wafer includes a SiC substrate and an epitaxial layer laminated on the SiC substrate, wherein the epitaxial layer comprises a first layer, a second layer and a third layer in order from the SiC substrate side, the nitrogen concentration of the SiC substrate is 6.0×1018 cm−3 or more and 1.5×1019 cm−3 or less, the nitrogen concentration of the first layer is 1.0×1017 cm−3 or more and 1.5×1018 cm−3 or less, the nitrogen concentration of the second layer is 1.0×1018 cm−3 or more and 5.0×1018 cm−3 or less, and the nitrogen concentration of the third layer is 5.0×1013 cm−3 or more and 1.0×1017 cm−3 or less.

公开(公告)号：US20210202294A1

公开(公告)日：2021-07-01

申请号：US17110637

申请日：2020-12-03

Applicant: SHOWA DENKO K.K.

Inventor： Yuichiro MABUCHI ,  Yoshikazu UMETA

IPC: H01L21/687 ,  C30B25/12 ,  C30B29/36 ,  C23C16/32 ,  C23C16/458

Abstract: A susceptor for supporting a disk-shaped wafer when performing a surface treatment, includes a protruding region, and at least three support parts, provided on the protruding region, and configured to support the disk-shaped wafer by making contact with a back surface of the disk-shaped wafer. A ratio of a total area of the support parts with respect to an area of the protruding region is 10% or less in a plan view of the disk-shaped wafer.