公开(公告)号：US09275912B1

公开(公告)日：2016-03-01

申请号：US14013753

申请日：2013-08-29

Applicant: SORAA, INC.

Inventor： Wenkan Jiang ,  Dirk Ehrentraut ,  Bradley C. Downey ,  Mark P. D'Evelyn

IPC: H01L29/04 ,  H01L31/036 ,  H01L33/16 ,  H01L21/66

CPC classification number: H01L22/12 ,  H01L22/24

Abstract: Methods for quantifying extended defects in a gallium-containing nitride crystal, wafer, or device, are disclosed. The methods include providing a gallium-containing nitride crystal, wafer, or device, processing the gallium-containing nitride crystal, wafer, or device in an etchant solution comprising one or more of H3PO4, H3PO4 that has been conditioned by prolonged heat treatment to form polyphosphoric acid, and H2SO4; removing the gallium-containing nitride crystal, wafer, or device from the etchant solution; and quantifying the concentration of at least one of etch pits or etch grooves.

Abstract translation: 公开了用于量化含氮氮化物晶体，晶片或器件中的扩展缺陷的方法。 所述方法包括提供含镓氮化物晶体，晶片或器件，在包含通过长时间热处理调理的H3PO4，H3PO4中的一种或多种的蚀刻剂溶液中处理含镓氮化物晶体，晶片或器件以形成 多磷酸和H2SO4; 从蚀刻剂溶液中除去含镓氮化物晶体，晶片或器件; 以及量化蚀刻坑或蚀刻槽中的至少一个的浓度。