公开(公告)号：US20220352369A1

公开(公告)日：2022-11-03

申请号：US17761510

申请日：2020-08-20

Applicant: SOUTHEAST UNIVERSITY ,  CSMC TECHNOLOGIES FAB2 CO.,LTD.

Inventor： JING ZHU ,  GUICHUANG ZHU ,  NAILONG HE ,  SEN ZHANG ,  SHAOHONG LI ,  WEIFENG SUN ,  LONGXING SHI

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/10

Abstract: A laterally double-diffused metal oxide semiconductor device is provided, including: a drift region (3) having a first conductivity type; a first body region (10) disposed on the drift region (3) and having a second conductivity type, the first conductivity type and the second conductivity type being opposite conductivity types; a first conductivity type region (13) disposed in the first body region (10); a second body region (12) disposed in the first conductivity type region (13) and having the second conductivity type; a source region (11) disposed in the second body region (12) and having the first conductivity type; and a contact region (9) disposed in the first body region (10) and having the second conductivity type.

公开(公告)号：US20220223692A1

公开(公告)日：2022-07-14

申请号：US17624336

申请日：2020-09-25

Applicant: SOUTHEAST UNIVERSITY ,  CSMC TECHNOLOGIES FAB2 CO.,LTD

Inventor： SIYANG LIU ,  NINGBO LI ,  DEJIN WANG ,  KUI XIAO ,  CHI ZHANG ,  SHENG LI ,  XINYI TAO ,  WEIFENG SUN ,  LONGXING SHI

IPC: H01L29/20 ,  H01L29/66 ,  H01L29/872 ,  H01L29/06 ,  H01L21/02

Abstract: A gallium nitride power device, including: a gallium nitride substrate; cathodes; a plurality of gallium nitride protruding structures arranged on the gallium nitride substrate and between the cathodes, a groove is formed between adjacent gallium nitride protruding structures; an electron transport layer, covering a top portion and side surfaces of each of the gallium nitride protruding structures; a gallium nitride layer, arranged on the electron transport layer and filling each of the grooves; a plurality of second conductivity type regions, where each of the second conductivity type regions extends downward from a top portion of the gallium nitride layer into one of the grooves, and the top portion of each of the gallium nitride protruding structures is higher than a bottom portion of each of the second conductivity type regions; and an anode, arranged on the gallium nitride layer and the second conductivity type regions.