公开(公告)号：US20220352369A1

公开(公告)日：2022-11-03

申请号：US17761510

申请日：2020-08-20

Applicant: SOUTHEAST UNIVERSITY ,  CSMC TECHNOLOGIES FAB2 CO.,LTD.

Inventor： JING ZHU ,  GUICHUANG ZHU ,  NAILONG HE ,  SEN ZHANG ,  SHAOHONG LI ,  WEIFENG SUN ,  LONGXING SHI

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/10

Abstract: A laterally double-diffused metal oxide semiconductor device is provided, including: a drift region (3) having a first conductivity type; a first body region (10) disposed on the drift region (3) and having a second conductivity type, the first conductivity type and the second conductivity type being opposite conductivity types; a first conductivity type region (13) disposed in the first body region (10); a second body region (12) disposed in the first conductivity type region (13) and having the second conductivity type; a source region (11) disposed in the second body region (12) and having the first conductivity type; and a contact region (9) disposed in the first body region (10) and having the second conductivity type.