公开(公告)号：US20190120873A1

公开(公告)日：2019-04-25

申请号：US16095011

申请日：2017-04-24

Applicant: STC. UNM

Inventor： Steven R.J. BRUECK ,  Daniel FEEZELL ,  John RANDALL ,  Tito BUSANI ,  Joshua B. BALLARD ,  Mahmoud BEHZADIRAD ,  Ashwin Krishnan RISHINARAMANGALAM

IPC: G01Q60/16 ,  B82B3/00 ,  G01Q70/14 ,  G03F7/00 ,  G01Q70/06 ,  G01Q80/00

Abstract: Provided is a composite metal-wide-bandgap semiconductor tip for scanning tunneling microscopy and/or scanning, tunneling lithography, a method of forming, and a method for using the composite metal-wide-bandgap semiconductor tip.