公开(公告)号：US20140148000A1

公开(公告)日：2014-05-29

申请号：US14166789

申请日：2014-01-28

Applicant: STMICROELECTRONICS S.r.I.

Inventor： Giacomo BARLETTA

IPC: H01L21/28

CPC classification number: H01L21/28158 ,  H01L21/28008 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66734 ,  H01L29/7811 ,  H01L29/7813

Abstract: An embodiment for realizing a power device with trench-gate structure integrated on a semiconductor substrate, and including etching the semiconductor substrate to make a first trench having first side walls and a first bottom; and further etching said semiconductor substrate to make a second trench inside the first trench, realized in a self-aligned way and below this first trench, the first trench and the second trench defining the trench-gate structure with a bird beak-like transition profile suitable for containing a gate region.

Abstract translation: 一种用于实现集成在半导体衬底上的沟槽栅结构的功率器件的实施例，包括蚀刻半导体衬底以制造具有第一侧壁和第一底部的第一沟槽; 并且进一步蚀刻所述半导体衬底以在所述第一沟槽内部形成第二沟槽，所述第二沟槽以自对准的方式实现并且在所述第一沟槽下方，所述第一沟槽和所述第二沟槽限定所述沟槽栅极结构，所述沟槽栅极结构具有鸟嘴状过渡曲线 适合包含门区域。