公开(公告)号：US11715769B2

公开(公告)日：2023-08-01

申请号：US17375426

申请日：2021-07-14

Applicant: STMicroelectronics S.r.l.

Inventor： Simone Rascuna ,  Claudio Chibbaro

IPC: H01L29/16 ,  H01L29/66 ,  H01L29/872

CPC classification number: H01L29/1608 ,  H01L29/66143 ,  H01L29/872

Abstract: An electronic device includes a solid body of SiC having a surface and having a first conductivity type. A first implanted region and a second implanted region have a second conductivity type and extend into the solid body in a direction starting from the surface and delimit between them a surface portion of the solid body. A Schottky contact is on the surface and in direct contact with the surface portion. Ohmic contacts are on the surface and in direct contact with the first and second implanted regions. The solid body includes an epitaxial layer including the surface portion and a bulk portion. The surface portion houses a plurality of doped sub-regions which extend in succession one after another in the direction, are of the first conductivity type, and have a respective conductivity level higher than that of the bulk portion.

公开(公告)号：US11495508B2

公开(公告)日：2022-11-08

申请号：US17039289

申请日：2020-09-30

Applicant: STMicroelectronics S.r.l.

Inventor： Simone Rascuna′ ,  Claudio Chibbaro ,  Alfio Guarnera ,  Mario Giuseppe Saggio ,  Francesco Lizio

IPC: H01L23/31 ,  H01L21/04 ,  H01L21/56 ,  H01L29/16 ,  H01L29/06 ,  H01L29/66

Abstract: An electronic power device includes a substrate of silicon carbide (SiC) having a front surface and a rear surface which lie in a horizontal plane and are opposite to one another along a vertical axis. The substrate includes an active area, provided in which are a number of doped regions, and an edge area, which is not active, distinct from and surrounding the active area. A dielectric region is arranged above the front surface, in at least the edge area. A passivation layer is arranged above the front surface of the substrate, and is in contact with the dielectric region in the edge area. The passivation layer includes at least one anchorage region that extends through the thickness of the dielectric region at the edge area, such as to define a mechanical anchorage for the passivation layer.

公开(公告)号：US12125762B2

公开(公告)日：2024-10-22

申请号：US18052510

申请日：2022-11-03

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Simone Rascuna' ,  Claudio Chibbaro ,  Alfio Guarnera ,  Mario Giuseppe Saggio ,  Francesco Lizio

IPC: H01L21/04 ,  H01L21/56 ,  H01L23/31 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/861 ,  H01L29/872

CPC classification number: H01L23/3171 ,  H01L21/045 ,  H01L21/56 ,  H01L29/1608

Abstract: An electronic power device includes a substrate of silicon carbide (SiC) having a front surface and a rear surface which lie in a horizontal plane and are opposite to one another along a vertical axis. The substrate includes an active area, provided in which are a number of doped regions, and an edge area, which is not active, distinct from and surrounding the active area. A dielectric region is arranged above the front surface, in at least the edge area. A passivation layer is arranged above the front surface of the substrate, and is in contact with the dielectric region in the edge area. The passivation layer includes at least one anchorage region that extends through the thickness of the dielectric region at the edge area, such as to define a mechanical anchorage for the passivation layer.

公开(公告)号：US12094933B2

公开(公告)日：2024-09-17

申请号：US18334275

申请日：2023-06-13

Applicant: STMicroelectronics S.r.l.

Inventor： Simone Rascuna ,  Claudio Chibbaro

IPC: H01L29/16 ,  H01L29/66 ,  H01L29/872

CPC classification number: H01L29/1608 ,  H01L29/66143 ,  H01L29/872

Abstract: An electronic device includes a solid body of SiC having a surface and having a first conductivity type. A first implanted region and a second implanted region have a second conductivity type and extend into the solid body in a direction starting from the surface and delimit between them a surface portion of the solid body. A Schottky contact is on the surface and in direct contact with the surface portion. Ohmic contacts are on the surface and in direct contact with the first and second implanted regions. The solid body includes an epitaxial layer including the surface portion and a bulk portion. The surface portion houses a plurality of doped sub-regions which extend in succession one after another in the direction, are of the first conductivity type, and have a respective conductivity level higher than that of the bulk portion.