公开(公告)号：US10128396B2

公开(公告)日：2018-11-13

申请号：US14055397

申请日：2013-10-16

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Cosimo Gerardi ,  Cristina Tringali ,  Sebastiano Ravesi ,  Marina Foti ,  NoemiGraziana Sparta′ ,  Corrado Accardi ,  Stella Loverso

IPC: H01L31/00 ,  H01L31/075 ,  H01L31/0376 ,  H01L31/0392 ,  H01L31/18 ,  H01L31/20

Abstract: A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.

公开(公告)号：US12166143B2

公开(公告)日：2024-12-10

申请号：US17649837

申请日：2022-02-03

Applicant: STMicroelectronics S.r.l.

Inventor： Cosimo Gerardi ,  Cristina Tringali ,  Sebastiano Ravesi ,  Marina Foti ,  NoemiGraziana Sparta′ ,  Corrado Accardi ,  Stella Loverso

IPC: H01L21/02 ,  H01L31/0376 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20

Abstract: A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.