公开(公告)号：US11257975B2

公开(公告)日：2022-02-22

申请号：US16167796

申请日：2018-10-23

Applicant: STMicroelectronics S.r.l.

Inventor： Cosimo Gerardi ,  Cristina Tringali ,  Sebastiano Ravesi ,  Marina Foti ,  NoemiGraziana Sparta' ,  Corrado Accardi ,  Stella Loverso

IPC: H01L31/075 ,  H01L31/0376 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0392

Abstract: A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.

公开(公告)号：US09087692B2

公开(公告)日：2015-07-21

申请号：US13762819

申请日：2013-02-08

Applicant: STMicroelectronics S.r.l.

Inventor： Corrado Accardi ,  Stella Loverso ,  Sebastiano Ravesi ,  Noemi Graziana Sparta

IPC: H01L21/02 ,  H01L51/00 ,  C01B31/04 ,  B82Y30/00 ,  B82Y40/00

CPC classification number: H01L21/02527 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C01B32/194 ,  H01L51/00 ,  H01L51/003

Abstract: A method transfers a graphene layer from a donor substrate onto a final substrate. The method includes: providing a metal layer on the donor substrate; and growing a graphene layer on the metal layer. The method also includes: laminating a dry film photo-resist on the graphene layer; laminating a tape on the dry film photo-resist; chemically. etching the metal layer, obtaining an initial structure that includes the tape, the dry film photo-resist and the graphene layer; laminating the initial structure on the final substrate; thermally realizing the tape, so as to obtain an intermediate structure that includes the dry film photo-resist, the graphene layer and the final substrate; removing the dry film photo-resist; and obtaining a final structure that includes the final substrate with a transferred graphene layer.

Abstract translation: 一种方法将石墨烯层从施主衬底转移到最终衬底上。 该方法包括：在施主衬底上提供金属层; 并在金属层上生长石墨烯层。 该方法还包括：在石墨烯层上层压干膜光致抗蚀剂; 将胶带层叠在干膜光刻胶上; 化学的。 蚀刻金属层，获得包括带，干膜光致抗蚀剂和石墨烯层的初始结构; 在最终基板上层压初始结构; 从而获得包括干膜光致抗蚀剂，石墨烯层和最终基底的中间结构; 去除干膜光刻胶; 并且获得包括具有转移的石墨烯层的最终基底的最终结构。

公开(公告)号：US10128396B2

公开(公告)日：2018-11-13

申请号：US14055397

申请日：2013-10-16

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Cosimo Gerardi ,  Cristina Tringali ,  Sebastiano Ravesi ,  Marina Foti ,  NoemiGraziana Sparta′ ,  Corrado Accardi ,  Stella Loverso

IPC: H01L31/00 ,  H01L31/075 ,  H01L31/0376 ,  H01L31/0392 ,  H01L31/18 ,  H01L31/20

Abstract: A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.

公开(公告)号：US09331151B2

公开(公告)日：2016-05-03

申请号：US14788159

申请日：2015-06-30

Applicant: STMicroelectronics S.r.l.

Inventor： Sebastiano Ravesi ,  Corrado Accardi ,  Cristina Tringali ,  Noemi Graziana Sparta′ ,  Stella Loverso ,  Filippo Giannazzo

IPC: H01L23/58 ,  H01L21/322 ,  H01L29/16 ,  H01L21/02 ,  H01L21/762 ,  H01L29/786 ,  H01L31/028

CPC classification number: H01L29/1606 ,  G01R31/2648 ,  H01L21/02376 ,  H01L21/7624 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78684 ,  H01L31/028

Abstract: The present disclosure regards a method for coupling a graphene layer to a substrate having at least one hydrophilic surface, the method comprising the steps of providing the substrate having at least one hydrophilic surface, depositing on the hydrophilic surface a layer of a solvent selected in the group constituted by acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone and mixtures thereof and depositing on the solvent layer a graphene layer. It moreover regards an electronic device comprising the graphene/substrate structure obtained.

公开(公告)号：US20130334579A1

公开(公告)日：2013-12-19

申请号：US13917379

申请日：2013-06-13

Applicant: STMicroelectronics S.r.l.

Inventor： Corrado Accardi ,  Stella Loverso ,  Sebastiano Ravesi ,  Noemi Graziana Sparta

IPC: H01L29/66

CPC classification number: G01N27/414 ,  B01L3/502707 ,  H01L29/1606 ,  H01L29/66 ,  H01L29/66053

Abstract: A manufacturing method of an electrochemical sensor comprises forming a graphene layer on a donor substrate, laminating a film of dry photoresist on the graphene layer, removing the donor substrate to obtain an intermediate structure comprising the film of dry photoresist and the graphene layer, and laminating the intermediate structure onto a final substrate with the graphene layer in electrical contact with first and second electrodes positioned on the final substrate. The film of dry photoresist is then patterned to form a microfluidic structure on the graphene layer and an additional dry photoresist layer is laminated over the structure. In one type of sensor manufactured by this process, the graphene layer acts as a channel region of a field-effect transistor, whose conductive properties vary according to characteristics of an analyte introduced into the microfluidic structure.

Abstract translation: 电化学传感器的制造方法包括在供体基板上形成石墨烯层，在石墨烯层上层叠干燥光致抗蚀剂膜，去除供体基板以获得包含干燥光致抗蚀剂和石墨烯层的膜的中间结构，以及层压 所述中间结构位于最后的基底上，所述石墨烯层与位于最终基底上的第一和第二电极电接触。 然后将干燥光致抗蚀剂的膜图案化以在石墨烯层上形成微流体结构，并且在结构上层叠另外的干燥光致抗蚀剂层。 在通过该方法制造的一种类型的传感器中，石墨烯层用作场效应晶体管的沟道区，其导电特性根据引入微流体结构的分析物的特性而变化。

公开(公告)号：US12166143B2

公开(公告)日：2024-12-10

申请号：US17649837

申请日：2022-02-03

Applicant: STMicroelectronics S.r.l.

Inventor： Cosimo Gerardi ,  Cristina Tringali ,  Sebastiano Ravesi ,  Marina Foti ,  NoemiGraziana Sparta′ ,  Corrado Accardi ,  Stella Loverso

IPC: H01L21/02 ,  H01L31/0376 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20

Abstract: A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.

公开(公告)号：US09476852B2

公开(公告)日：2016-10-25

申请号：US14986132

申请日：2015-12-31

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Corrado Accardi ,  Stella Loverso ,  Sebastiano Ravesi ,  Noemi Graziana Sparta

IPC: H01L21/3205 ,  G01N27/414 ,  H01L29/66 ,  H01L29/16 ,  B01L3/00

CPC classification number: G01N27/414 ,  B01L3/502707 ,  H01L29/1606 ,  H01L29/66 ,  H01L29/66053

Abstract: A manufacturing method of an electrochemical sensor comprises forming a graphene layer on a donor substrate, laminating a film of dry photoresist on the graphene layer, removing the donor substrate to obtain an intermediate structure comprising the film of dry photoresist and the graphene layer, and laminating the intermediate structure onto a final substrate with the graphene layer in electrical contact with first and second electrodes positioned on the final substrate. The film of dry photoresist is then patterned to form a microfluidic structure on the graphene layer and an additional dry photoresist layer is laminated over the structure. In one type of sensor manufactured by this process, the graphene layer acts as a channel region of a field-effect transistor, whose conductive properties vary according to characteristics of an analyte introduced into the microfluidic structure.

Abstract translation: 电化学传感器的制造方法包括在供体基板上形成石墨烯层，在石墨烯层上层叠干燥光致抗蚀剂膜，去除供体基板以获得包含干燥光致抗蚀剂和石墨烯层的膜的中间结构，以及层压 所述中间结构位于最后的基底上，所述石墨烯层与位于最终基底上的第一和第二电极电接触。 然后将干燥光致抗蚀剂的膜图案化以在石墨烯层上形成微流体结构，并且在结构上层叠另外的干燥光致抗蚀剂层。 在通过该方法制造的一种类型的传感器中，石墨烯层用作场效应晶体管的沟道区，其导电特性根据引入微流体结构的分析物的特性而变化。

公开(公告)号：US20150303264A1

公开(公告)日：2015-10-22

申请号：US14788159

申请日：2015-06-30

Applicant: STMicroelectronics S.r.l.

Inventor： Sebastiano Ravesi ,  Corrado Accardi ,  Cristina Tringali ,  Noemi Graziana Sparta' ,  Stella Loverso ,  Filippo Giannazzo

IPC: H01L29/16 ,  H01L31/028 ,  H01L29/786

CPC classification number: H01L29/1606 ,  G01R31/2648 ,  H01L21/02376 ,  H01L21/7624 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78684 ,  H01L31/028

Abstract: The present disclosure regards a method for coupling a graphene layer to a substrate having at least one hydrophilic surface, the method comprising the steps of providing the substrate having at least one hydrophilic surface, depositing on the hydrophilic surface a layer of a solvent selected in the group constituted by acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone and mixtures thereof and depositing on the solvent layer a graphene layer. It moreover regards an electronic device comprising the graphene/substrate structure obtained.

Abstract translation: 本公开涉及一种用于将石墨烯层与具有至少一个亲水表面的基底结合的方法，所述方法包括以下步骤：提供具有至少一个亲水表面的基底，在亲水表面上沉积选自 由丙酮，乳酸乙酯，异丙醇，甲基乙基酮及其混合物构成的基团，并在溶剂层上沉积石墨烯层。 此外，还涉及一种包括获得的石墨烯/基底结构的电子器件。

公开(公告)号：US20140319655A1

公开(公告)日：2014-10-30

申请号：US14265034

申请日：2014-04-29

Applicant: STMicroelectronics S.r.l.

Inventor： Noemi Graziana Sparta' ,  Cristina Tringali ,  Stella Loverso ,  Sebastiano Ravesi ,  Corrado Accardi ,  Filippo Giannazzo

IPC: H01L21/02 ,  H01L29/16

CPC classification number: H01L29/1606 ,  G01R31/2648 ,  H01L21/02376 ,  H01L21/7624 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78684 ,  H01L31/028

Abstract: The present disclosure regards a method for coupling a graphene layer to a substrate having at least one hydrophilic surface, the method comprising the steps of providing the substrate having at least one hydrophilic surface, depositing on the hydrophilic surface a layer of a solvent selected in the group constituted by acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone and mixtures thereof and depositing on the solvent layer a graphene layer. It moreover regards an electronic device comprising the graphene/substrate structure obtained.

Abstract translation: 本公开涉及一种用于将石墨烯层与具有至少一个亲水表面的基底结合的方法，所述方法包括以下步骤：提供具有至少一个亲水表面的基底，在亲水表面上沉积选自 由丙酮，乳酸乙酯，异丙醇，甲基乙基酮及其混合物构成的基团，并在溶剂层上沉积石墨烯层。 此外，还涉及一种包括获得的石墨烯/基底结构的电子器件。

公开(公告)号：US20190097074A1

公开(公告)日：2019-03-28

申请号：US16167796

申请日：2018-10-23

Applicant: STMicroelectronics S.r.l.

Inventor： Cosimo Gerardi ,  Cristina Tringali ,  Sebastiano Ravesi ,  Marina Foti ,  NoemiGraziana Sparta' ,  Corrado Accardi ,  Stella Loverso

IPC: H01L31/075 ,  H01L31/0392 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0376

Abstract: A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.