公开(公告)号：US10128396B2

公开(公告)日：2018-11-13

申请号：US14055397

申请日：2013-10-16

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Cosimo Gerardi ,  Cristina Tringali ,  Sebastiano Ravesi ,  Marina Foti ,  NoemiGraziana Sparta′ ,  Corrado Accardi ,  Stella Loverso

IPC: H01L31/00 ,  H01L31/075 ,  H01L31/0376 ,  H01L31/0392 ,  H01L31/18 ,  H01L31/20

Abstract: A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.

公开(公告)号：US09331151B2

公开(公告)日：2016-05-03

申请号：US14788159

申请日：2015-06-30

Applicant: STMicroelectronics S.r.l.

Inventor： Sebastiano Ravesi ,  Corrado Accardi ,  Cristina Tringali ,  Noemi Graziana Sparta′ ,  Stella Loverso ,  Filippo Giannazzo

IPC: H01L23/58 ,  H01L21/322 ,  H01L29/16 ,  H01L21/02 ,  H01L21/762 ,  H01L29/786 ,  H01L31/028

CPC classification number: H01L29/1606 ,  G01R31/2648 ,  H01L21/02376 ,  H01L21/7624 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78684 ,  H01L31/028

Abstract: The present disclosure regards a method for coupling a graphene layer to a substrate having at least one hydrophilic surface, the method comprising the steps of providing the substrate having at least one hydrophilic surface, depositing on the hydrophilic surface a layer of a solvent selected in the group constituted by acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone and mixtures thereof and depositing on the solvent layer a graphene layer. It moreover regards an electronic device comprising the graphene/substrate structure obtained.

公开(公告)号：US12165871B2

公开(公告)日：2024-12-10

申请号：US17083181

申请日：2020-10-28

Applicant: STMicroelectronics S.r.l.

Inventor： Ferdinando Iucolano ,  Cristina Tringali

IPC: H01L29/778 ,  H01L21/285 ,  H01L21/3213 ,  H01L29/20 ,  H01L29/205 ,  H01L29/47 ,  H01L29/66

Abstract: A method for manufacturing a HEMT device includes forming, on a heterostructure, a dielectric layer, forming a through opening through the dielectric layer, and forming a gate electrode in the through opening. Forming the gate electrode includes forming a sacrificial structure, depositing by evaporation a first gate metal layer layer, carrying out a lift-off of the sacrificial structure, depositing a second gate metal layer by sputtering, and depositing a third gate metal layer. The second gate metal layer layer forms a barrier against the diffusion of metal atoms towards the heterostructure.

公开(公告)号：US11257975B2

公开(公告)日：2022-02-22

申请号：US16167796

申请日：2018-10-23

Applicant: STMicroelectronics S.r.l.

Inventor： Cosimo Gerardi ,  Cristina Tringali ,  Sebastiano Ravesi ,  Marina Foti ,  NoemiGraziana Sparta' ,  Corrado Accardi ,  Stella Loverso

IPC: H01L31/075 ,  H01L31/0376 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0392

Abstract: A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.

公开(公告)号：US11018008B2

公开(公告)日：2021-05-25

申请号：US16209680

申请日：2018-12-04

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Edoardo Zanetti ,  Simone Rascuná ,  Mario Giuseppe Saggio ,  Alfio Guarnera ,  Leonardo Fragapane ,  Cristina Tringali

IPC: H01L21/04 ,  H01L21/285 ,  H01L29/872 ,  H01L29/66 ,  H01L29/16 ,  H01L29/78 ,  H01L29/06

Abstract: A manufacturing method of an electronic device includes: forming a drift layer of an N type; forming a trench in the drift layer; forming an edge-termination structure alongside the trench by implanting dopant species of a P type; and forming a depression region between the trench and the edge-termination structure by digging the drift layer. The steps of forming the depression region and the trench are carried out at the same time. The step of forming the depression region comprises patterning the drift layer to form a structural connection with the edge-termination structure having a first slope, and the step of forming the trench comprises etching the drift layer to define side walls of the trench, which have a second slope steeper than the first slope.

公开(公告)号：US12166143B2

公开(公告)日：2024-12-10

申请号：US17649837

申请日：2022-02-03

Applicant: STMicroelectronics S.r.l.

Inventor： Cosimo Gerardi ,  Cristina Tringali ,  Sebastiano Ravesi ,  Marina Foti ,  NoemiGraziana Sparta′ ,  Corrado Accardi ,  Stella Loverso

IPC: H01L21/02 ,  H01L31/0376 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20

Abstract: A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.

公开(公告)号：US20150303264A1

公开(公告)日：2015-10-22

申请号：US14788159

申请日：2015-06-30

Applicant: STMicroelectronics S.r.l.

Inventor： Sebastiano Ravesi ,  Corrado Accardi ,  Cristina Tringali ,  Noemi Graziana Sparta' ,  Stella Loverso ,  Filippo Giannazzo

IPC: H01L29/16 ,  H01L31/028 ,  H01L29/786

CPC classification number: H01L29/1606 ,  G01R31/2648 ,  H01L21/02376 ,  H01L21/7624 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78684 ,  H01L31/028

Abstract: The present disclosure regards a method for coupling a graphene layer to a substrate having at least one hydrophilic surface, the method comprising the steps of providing the substrate having at least one hydrophilic surface, depositing on the hydrophilic surface a layer of a solvent selected in the group constituted by acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone and mixtures thereof and depositing on the solvent layer a graphene layer. It moreover regards an electronic device comprising the graphene/substrate structure obtained.

Abstract translation: 本公开涉及一种用于将石墨烯层与具有至少一个亲水表面的基底结合的方法，所述方法包括以下步骤：提供具有至少一个亲水表面的基底，在亲水表面上沉积选自 由丙酮，乳酸乙酯，异丙醇，甲基乙基酮及其混合物构成的基团，并在溶剂层上沉积石墨烯层。 此外，还涉及一种包括获得的石墨烯/基底结构的电子器件。

公开(公告)号：US20140319655A1

公开(公告)日：2014-10-30

申请号：US14265034

申请日：2014-04-29

Applicant: STMicroelectronics S.r.l.

Inventor： Noemi Graziana Sparta' ,  Cristina Tringali ,  Stella Loverso ,  Sebastiano Ravesi ,  Corrado Accardi ,  Filippo Giannazzo

IPC: H01L21/02 ,  H01L29/16

CPC classification number: H01L29/1606 ,  G01R31/2648 ,  H01L21/02376 ,  H01L21/7624 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78684 ,  H01L31/028

Abstract: The present disclosure regards a method for coupling a graphene layer to a substrate having at least one hydrophilic surface, the method comprising the steps of providing the substrate having at least one hydrophilic surface, depositing on the hydrophilic surface a layer of a solvent selected in the group constituted by acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone and mixtures thereof and depositing on the solvent layer a graphene layer. It moreover regards an electronic device comprising the graphene/substrate structure obtained.

Abstract translation: 本公开涉及一种用于将石墨烯层与具有至少一个亲水表面的基底结合的方法，所述方法包括以下步骤：提供具有至少一个亲水表面的基底，在亲水表面上沉积选自 由丙酮，乳酸乙酯，异丙醇，甲基乙基酮及其混合物构成的基团，并在溶剂层上沉积石墨烯层。 此外，还涉及一种包括获得的石墨烯/基底结构的电子器件。

公开(公告)号：US11854809B2

公开(公告)日：2023-12-26

申请号：US18061795

申请日：2022-12-05

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Edoardo Zanetti ,  Simone Rascuna' ,  Mario Giuseppe Saggio ,  Alfio Guarnera ,  Leonardo Fragapane ,  Cristina Tringali

IPC: H01L21/04 ,  H01L21/285 ,  H01L29/872 ,  H01L29/66 ,  H01L29/16 ,  H01L29/78 ,  H01L29/06

CPC classification number: H01L21/046 ,  H01L21/0495 ,  H01L21/28537 ,  H01L29/0619 ,  H01L29/0661 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/66143 ,  H01L29/66734 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872 ,  H01L29/8725

Abstract: A manufacturing method of an electronic device includes: forming a drift layer of an N type; forming a trench in the drift layer; forming an edge-termination structure alongside the trench by implanting dopant species of a P type; and forming a depression region between the trench and the edge-termination structure by digging the drift layer. The steps of forming the depression region and the trench are carried out at the same time. The step of forming the depression region comprises patterning the drift layer to form a structural connection with the edge-termination structure having a first slope, and the step of forming the trench comprises etching the drift layer to define side walls of the trench, which have a second slope steeper than the first slope.

公开(公告)号：US11545362B2

公开(公告)日：2023-01-03

申请号：US17244393

申请日：2021-04-29

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Edoardo Zanetti ,  Simone Rascuna' ,  Mario Giuseppe Saggio ,  Alfio Guarnera ,  Leonardo Fragapane ,  Cristina Tringali

IPC: H01L29/16 ,  H01L21/04 ,  H01L21/285 ,  H01L29/872 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06

Abstract: A manufacturing method of an electronic device includes: forming a drift layer of an N type; forming a trench in the drift layer; forming an edge-termination structure alongside the trench by implanting dopant species of a P type; and forming a depression region between the trench and the edge-termination structure by digging the drift layer. The steps of forming the depression region and the trench are carried out at the same time. The step of forming the depression region comprises patterning the drift layer to form a structural connection with the edge-termination structure having a first slope, and the step of forming the trench comprises etching the drift layer to define side walls of the trench, which have a second slope steeper than the first slope.