公开(公告)号：US20030060028A1

公开(公告)日：2003-03-27

申请号：US10242293

申请日：2002-09-12

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Peter Ward ,  Simona Lorenti ,  Giuseppe Ferla

IPC: H01L021/331 ,  H01L021/20 ,  C30B001/00 ,  H01L021/36

CPC classification number: H01L21/02667 ,  H01L21/02532 ,  H01L21/2022

Abstract: A method for forming an interface free layer of silicon on a substrate of monocrystalline silicon is provided. According to the method, a substrate of monocrystalline silicon having a surface substantially free of oxide is provided. A silicon layer in-situ doped is deposited on the surface of the substrate in an oxygen-free environment and at a temperature below 700null C. so as to produce a monocrystalline portion of the silicon layer adjacent to the substrate and a polycrystalline portion of the silicon layer spaced apart from the substrate. The silicon layer is heated so as to grow the monocrystalline portion of the silicon layer through a part of the polycrystalline portion of the silicon layer. Also provided is a method for manufacturing a bipolar transistor.

Abstract translation: 提供了在单晶硅衬底上形成硅界面自由层的方法。 根据该方法，提供具有基本上不含氧化物的表面的单晶硅的衬底。 原位掺杂的硅层在无氧环境和低于700℃的温度下沉积在衬底的表面上，以便产生与衬底相邻的硅层的单晶部分和多晶部分 所述硅层与所述衬底间隔开。 加热硅层，以使硅层的单晶部分通过硅层的多晶部分的一部分生长。 还提供了制造双极晶体管的方法。