公开(公告)号：US20150279970A1

公开(公告)日：2015-10-01

申请号：US14231466

申请日：2014-03-31

Applicant: STMicroelctronics, Inc.

Inventor： John H. Zhang

IPC: H01L29/66 ,  H01L29/78

CPC classification number: H01L29/66795 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/7845 ,  H01L29/785

Abstract: Stress is introduced into the channel of an SOI FinFET device by transfer directly from a metal gate. In SOI devices in particular, stress transfer efficiency from the metal gate to the channel is nearly 100%. Either tensile or compressive stress can be applied to the fin channel by choosing different materials to be used in the gate stack as the bulk gate material, a gate liner, or a work function material, or by varying processing parameters during deposition of the gate or work function materials. P-gates and N-gates are therefore formed separately. Gate materials suitable for use as stressors include tungsten (W) for NFETs and titanium nitride (TiN) for PFETs. An optical planarization material assists in patterning the stress-inducing metal gates. A simplified process flow is disclosed in which isolation regions are formed without need for a separate mask layer, and gate sidewall spacers are not used.

Abstract translation: 通过直接从金属栅极传输，将SOI应用引入到SOI FinFET器件的沟道中。 特别是在SOI器件中，从金属栅极到沟道的应力传递效率接近100％。 可以通过选择在栅极堆叠中使用的不同材料作为体栅极材料，栅极衬垫或功函数材料，或者通过在栅极沉积期间改变处理参数来对鳍状物通道施加拉伸或压缩应力 工作功能材料。 因此，分别形成P-栅极和N-栅极。 适合用作应力源的栅极材料包括用于NFET的钨（W）和用于PFET的氮化钛（TiN）。 光学平面化材料有助于图案化应力诱导金属栅极。 公开了简化的工艺流程，其中形成隔离区而不需要单独的掩模层，并且不使用栅极侧壁间隔物。

公开(公告)号：US09162339B2

公开(公告)日：2015-10-20

申请号：US14035281

申请日：2013-09-24

Applicant: STMicroelctronics, Inc.

Inventor： John H. Zhang

IPC: B24B37/005 ,  B24B27/00 ,  B24B49/04

CPC classification number: B24B37/005 ,  B24B27/0076 ,  B24B49/04

Abstract: An adaptive uniform polishing system is equipped with feedback control to apply localized adjustments during a polishing operation. The adaptive uniform polishing system disclosed has particular application to the semiconductor industry. Such an adaptive uniform polishing system includes a rotatable head that holds a semiconductor wafer, and a processing unit structured to be placed in contact with an exposed surface of the wafer. The processing unit includes a rotatable macro-pad and a plurality of rotatable micro-pads that can polish different portions of the exposed surface at different rotation speeds and pressures. Thus, uniformity across the exposed surface can be enhanced by applying customized treatments to different areas. Customized treatments can include the use of different pad materials and geometries. Parameters of the adaptive uniform polishing system are programmable, based on in-situ data or data from other operations in a fabrication process, using advanced process control.

Abstract translation: 自适应均匀抛光系统配备有反馈控制，以在抛光操作期间应用局部调整。 所公开的自适应均匀抛光系统特别适用于半导体工业。 这种自适应均匀抛光系统包括保持半导体晶片的可旋转头部和被构造成与晶片的暴露表面接触的处理单元。 处理单元包括可旋转的宏观垫和多个可旋转的微垫，其可以以不同的转速和压力抛光暴露表面的不同部分。 因此，通过将定制的处理应用于不同的区域，可以增强暴露表面的均匀性。 定制处理可以包括使用不同的垫材料和几何形状。 自适应均匀抛光系统的参数是可编程的，基于在制造过程中的其他操作的原位数据或数据，使用先进的过程控制。