公开(公告)号：US20210273082A1

公开(公告)日：2021-09-02

申请号：US17175758

申请日：2021-02-15

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Edoardo BREZZA ,  A;exos GAUTHIER ,  Fabien DEPRAT ,  Pascal CHEVALIER

IPC: H01L29/737 ,  H01L21/8249 ,  H01L29/08 ,  H01L29/66 ,  H01L29/417

Abstract: A method of making a bipolar transistor includes forming a stack of a first, second, third and fourth insulating layers on a substrate. An opening is formed in the stack to reach the substrate. An epitaxial process forms the collector of the transistor on the substrate and selectively etches an annular opening in the third layer. The intrinsic part of the base is then formed by epitaxy on the collector, with the intrinsic part being separated from the third layer by the annular opening. The junction between the collector and the intrinsic part of the base is surrounded by the second layer. The emitter is formed on the intrinsic part and the third layer is removed. A selective deposition of a semiconductor layer on the second layer and in direct contact with the intrinsic part forms the extrinsic part of the base.