公开(公告)号：US20230258866A1

公开(公告)日：2023-08-17

申请号：US18152435

申请日：2023-01-10

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Houssein El Dirani

IPC: G02B6/136 ,  G02B6/132

CPC classification number: G02B6/136 ,  G02B6/132 ,  G02B2006/12061

Abstract: In accordance with an embodiment, a method for manufacturing a semiconductor device includes forming a first front layer and a first rear layer of a first material respectively on a front main face and a rear main face of a semiconductor substrate wafer; forming a first plurality of trenches and a second plurality of trenches respectively in a surface of the first front layer and in a surface of the first rear layer; forming a second front layer of a second material on the first front layer, where the second front layer extends over the first front layer, in the first plurality of trenches, and between the first plurality of trenches on the surface of the first front layer; and forming a second rear layer of the second material on the surface of the first rear layer, wherein the second rear layer extends over the first rear layer, in the second plurality of trenches, and between the second plurality of trenches on the surface of the first rear layer.

公开(公告)号：US20240178053A1

公开(公告)日：2024-05-30

申请号：US18514770

申请日：2023-11-20

Applicant: STMicroelectronics France ,  STMicroelectronics (Crolles 2) SAS

Inventor： Houssein El Dirani ,  Marouane Mastari ,  Mohamed Ali Nsibi

IPC: H01L21/762 ,  H01L23/522

CPC classification number: H01L21/76224 ,  H01L23/5226 ,  H01L23/5227

Abstract: The integrated circuit includes a semiconductor substrate having a front face including isolation structures that extend vertically into the substrate from the front face as far as a first depth, and an interconnection part comprising metal levels incorporating at least one passive component, above the front face of the substrate. The integrated circuit further includes a dielectric structure that is vertically aligned with the position of the at least one passive component, and that extends vertically into the substrate from the front face as far as a second depth that is greater than the first depth.