公开(公告)号：US20200252059A1

公开(公告)日：2020-08-06

申请号：US16747341

申请日：2020-01-20

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Capucine LECAT-MATHIEU DE BOISSAC ,  Fady ABOUZEID ,  Gilles GASIOT ,  Philippe ROCHE ,  Victor MALHERBE

IPC: H03K5/14 ,  H03K5/135

Abstract: A first circuit includes a first chain of identical stages defining first and second delay lines. A second circuit includes a second chain of identical stages defining third and fourth delay lines. The stages of the second chain are identical to the stages of the first chain. A third circuit selectively couples one of the third delay line, the fourth delay line, or a first input of the third circuit to an input of the first circuit.

公开(公告)号：US20220160314A1

公开(公告)日：2022-05-26

申请号：US17529543

申请日：2021-11-18

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Gilles GASIOT ,  Severin TROCHUT ,  Olivier LE NEEL ,  Victor MALHERBE

IPC: A61B6/00 ,  G01T1/24

Abstract: An X-ray detector includes a first circuit with an NPN-type bipolar transistor and a second circuit configured to compare a voltage at a terminal of the NPN-type bipolar transistor with a reference value substantially equal to a value of the terminal voltage which would occur when the first circuit has been exposed to a threshold quantity of X-rays.

公开(公告)号：US20180335526A1

公开(公告)日：2018-11-22

申请号：US15981321

申请日：2018-05-16

Applicant: STMicroelectronics (Crolles 2) SAS ,  Centre National De La Recherche Scientifique ,  UNIVERSITE D'AIX MARSEILLE ,  UNIVERSITE DE TOULON

Inventor： Martin COCHET ,  Dimitri SOUSSAN ,  Fady ABOUZEID ,  Gilles GASIOT ,  Philippe ROCHE

IPC: G01T1/02 ,  H03K3/03

CPC classification number: G01T1/026

Abstract: Absorbed ionizing particles differentially effect first and second acquiring circuit stages configured to respectively generate first and second acquisition signals. Each acquisition signal has a characteristic that is variable as a function of an amount of absorbed ionizing particles. A measuring circuit generates, on the basis of the first and second acquisition signals, a relative parameter indicative of a relationship between the variable characteristics. A computation of a total ionizing dose is made using a 1st- or 2nd-degree polynomial relationship in the relative parameter.

公开(公告)号：US20210382189A1

公开(公告)日：2021-12-09

申请号：US17408679

申请日：2021-08-23

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Gilles GASIOT ,  Fady ABOUZEID

IPC: G01T1/24 ,  H01L27/07 ,  H01L31/103

Abstract: A diode and a transistor are connected in parallel. The transistor is located on a first doped region forming a PN junction of the diode with a second doped region located under the first region. The circuit functions as an ionizing radiation detection cell by generating a current through the PN junction which changes by a voltage generated across the transistor. This change in voltage is compared to a threshold to detect the ionizing radiation.

公开(公告)号：US20200150292A1

公开(公告)日：2020-05-14

申请号：US16677005

申请日：2019-11-07

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Gilles GASIOT ,  Fady ABOUZEID

IPC: G01T1/24 ,  H01L27/07 ,  H01L31/103

Abstract: A diode and a transistor are connected in parallel. The transistor is located on a first doped region forming a PN junction of the diode with a second doped region located under the first region. The circuit functions as an ionizing radiation detection cell by generating a current through the PN junction which changes by a voltage generated across the transistor. This change in voltage is compared to a threshold to detect the ionizing radiation.