公开(公告)号：US20250118703A1

公开(公告)日：2025-04-10

申请号：US18904478

申请日：2024-10-02

Applicant: STMicroelectronics International N.V.

Inventor： Claudio ZAFFERONI ,  Antonio BELLIZZI ,  Alessandro MELLINA GOTTARDO

IPC: H01L23/00

Abstract: A semiconductor chip is covered by a non-LDS encapsulation material (i.e., encapsulation material not including LDS-activatable additives). One or more first pathways are opened towards the semiconductor chip through the non-LDS encapsulation material. LDS encapsulation material (i.e., encapsulation material including LDS-activatable additives) is molded over the non-LDS encapsulation material to fill the first pathways. One or more second pathways, aligned with the first pathways, are opened towards the semiconductor chip through the LDS encapsulation material. The second pathways have an inner lining of LDS encapsulation material. Electrical coupling formations for the semiconductor chip are provided via laser direct structuring processing of the LDS encapsulation material including the inner lining in the second pathways.

公开(公告)号：US20240332238A1

公开(公告)日：2024-10-03

申请号：US18615286

申请日：2024-03-25

Applicant: STMicroelectronics International N.V.

Inventor： Guendalina CATALANO ,  Antonio BELLIZZI ,  Claudio ZAFFERONI

IPC: H01L23/00

CPC classification number: H01L24/19 ,  H01L24/24 ,  H01L2224/19 ,  H01L2224/24245 ,  H01L2924/18162

Abstract: Laser direct structure (LDS) material is molded onto a semiconductor chip arranged on a substrate. The LDS material has a first thickness between a front surface of the LDS material and the substrate. A portion of the LDS material is removed (with a blade, for instance) to form a cavity having an end wall between the front surface of the LDS material and an electrically conductive formation on the substrate. At the cavity, the LDS material has a second thick ness smaller than the first thickness. Laser beam energy is applied to the LDS material at the end wall of the cavity to structure therein one or more vias that extend between the end wall of the cavity and the electrically conductive formation. The semiconductor chip and the electrically conductive formation are electrically coupled with electrically conductive material grown in the one or more vias laser structured in the LDS material.