公开(公告)号：US20250125228A1

公开(公告)日：2025-04-17

申请号：US18910661

申请日：2024-10-09

Applicant: STMicroelectronics International N.V.

Inventor： Guendalina CATALANO ,  Alessandro MELLINA GOTTARDO ,  Alberto ARRIGONI

IPC: H01L23/495 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31

Abstract: A semiconductor die is arranged at a die mounting region at a first surface of a die pad in a substrate. The die pad has a second surface opposite the first surface. Laser beam energy is applied to the second surface of the die pad to form in the second surface of the die pad a recessed peripheral portion surrounding a central portion opposite the die mounting region at the first surface. An encapsulation of electrically insulating material is molded onto the substrate. During molding, the electrically insulating material covers the recessed peripheral portion and leakage of the electrically insulating material over the central portion is countered in response to the peripheral portion of the second surface of the die pad being recessed.

公开(公告)号：US20250118703A1

公开(公告)日：2025-04-10

申请号：US18904478

申请日：2024-10-02

Applicant: STMicroelectronics International N.V.

Inventor： Claudio ZAFFERONI ,  Antonio BELLIZZI ,  Alessandro MELLINA GOTTARDO

IPC: H01L23/00

Abstract: A semiconductor chip is covered by a non-LDS encapsulation material (i.e., encapsulation material not including LDS-activatable additives). One or more first pathways are opened towards the semiconductor chip through the non-LDS encapsulation material. LDS encapsulation material (i.e., encapsulation material including LDS-activatable additives) is molded over the non-LDS encapsulation material to fill the first pathways. One or more second pathways, aligned with the first pathways, are opened towards the semiconductor chip through the LDS encapsulation material. The second pathways have an inner lining of LDS encapsulation material. Electrical coupling formations for the semiconductor chip are provided via laser direct structuring processing of the LDS encapsulation material including the inner lining in the second pathways.