公开(公告)号：US20250046665A1

公开(公告)日：2025-02-06

申请号：US18363149

申请日：2023-08-01

Applicant: STMicroelectronics International N.V.

Inventor： Gabriele BELLOCCHI ,  Simone RASCUNA' ,  Giacomo TORRISI

IPC: H01L23/31 ,  H01L21/02 ,  H01L21/768

Abstract: Methods, systems, and devices for improving passivation layer durability are described. A device may include a semiconductor substrate elongated along a first direction and a second direction. The first direction may be parallel to a width of the semiconductor substrate and the second direction may be parallel to a depth of the semiconductor substrate. The device may include one or more layers formed above the semiconductor substrate with respect to a third direction parallel to a height of the semiconductor substrate. At least a region of the one or more layers may include circuitry. The device may include a passivation layer formed above the one or more layers with respect to the third direction. The passivation layer may include a plurality of cavities that each extend through the passivation layer. The plurality of cavities and the circuitry may be non-overlapping with respect to the first direction and the second direction.