公开(公告)号：US20250015145A1

公开(公告)日：2025-01-09

申请号：US18348012

申请日：2023-07-06

Applicant: STMicroelectronics International N.V.

Inventor： Simone RASCUNA' ,  Paolo BADALA' ,  Gabriele BELLOCCHI ,  Valeria PUGLISI

IPC: H01L29/40 ,  H01L29/45 ,  H01L29/66 ,  H01L29/872

Abstract: A method for forming an ohmic contact on a semiconductor component, for example a high-power electrical diode, is provided. An example method includes depositing a first metal layer on a top surface of a semiconductor drift layer having an electrical contact point, the first metal layer highly reflective of a laser light. The method further includes depositing a second metal layer on portions of the first metal layer aligned with the electrical contact point, the second metal layer selected to absorb the laser light. The method further includes exposing the first and the second metal layers to the laser light in a laser annealing process, causing the second metal layer to substantially increase in temperature due to the laser light. The increase in temperature of the second metal layer causing the ohmic contact to form between the electrical contact point and the first metal layer.

公开(公告)号：US20240429286A1

公开(公告)日：2024-12-26

申请号：US18341147

申请日：2023-06-26

Applicant: STMicroelectronics International N.V.

Inventor： Simone RASCUNA ,  Paolo BADALA ,  Gabriele BELLOCCHI ,  Valeria PUGLISI ,  Dario TENAGLIA

IPC: H01L29/16 ,  H01L29/40 ,  H01L29/45 ,  H01L29/47

Abstract: Various embodiments of the present disclosure disclose improved silicon carbide (SiC) power devices and methods of fabrication of such devices. A SiC power device includes a semiconductor base material with a first side and a second side and a first metallic layer disposed on the first side of the semiconductor base material that forms ohmic contacts and Schottky contacts. The SiC power device may be fabricated by forming a first metallic layer on a first side of a semiconductor base material to form a Schottky contact, forming a second metallic layer over the first metallic layer to form a reflective barrier covering the Schottky contact, removing one or more portions of the second metallic layer to expose a first portion of the first metallic layer, and forming silicide portions on the first metallic layer to form ohmic contacts within the Schottky contact.

公开(公告)号：US20240297044A1

公开(公告)日：2024-09-05

申请号：US18583752

申请日：2024-02-21

Applicant: STMicroelectronics International N.V.

Inventor： Cateno Marco CAMALLERI ,  Mario Giuseppe SAGGIO ,  Edoardo ZANETTI ,  Gabriele BELLOCCHI

IPC: H01L21/04

CPC classification number: H01L21/0465

Abstract: A manufacturing process provides for: forming a semiconductor body of silicon carbide, having a front surface; performing a localized ion implantation to form implanted regions in implant portions in the semiconductor body. The step of performing a localized ion implantation provides for: forming damaged regions at the front surface, separated from each other by the implant portions in a direction parallel to the front surface; performing a channeled ion implantation, for implanting doping ions within the semiconductor body and forming the implanted regions at the implant portions of the semiconductor body. The channeled ion implantation is performed in a self-aligned manner with respect to the damaged regions, which represent damaged regions of the silicon-carbide crystallographic lattice such as to block a propagation of the channeled ion implantation along a vertical axis orthogonal to the front surface, in a depth direction of the semiconductor body.

公开(公告)号：US20240178092A1

公开(公告)日：2024-05-30

申请号：US18505569

申请日：2023-11-09

Applicant: STMICROELECTRONICS INTERNATIONAL N.V.

Inventor： Gabriele BELLOCCHI ,  Simone RASCUNA' ,  Valeria PUGLISI

IPC: H01L23/31 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/872

CPC classification number: H01L23/3192 ,  H01L23/3171 ,  H01L29/0623 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/872

Abstract: Electronic device, comprising: a solid body including a Silicon Carbide substrate, and further including an electrical terminal of the electronic device on the substrate; a passivation layer on the electrical terminal, of a first material; and a first adhesion improving layer coupled to the passivation layer and to the solid body, of a second material having predefined characteristics of adhesion to the first material, and configured to bond together the passivation layer and the solid body.

公开(公告)号：US20250107121A1

公开(公告)日：2025-03-27

申请号：US18889098

申请日：2024-09-18

Applicant: STMicroelectronics International N.V.

Inventor： Gabriele BELLOCCHI ,  Simone RASCUNÁ ,  Valeria PUGLISI ,  Paolo BADALÁ

IPC: H01L29/872 ,  H01L21/04 ,  H01L29/16 ,  H01L29/47 ,  H01L29/66

Abstract: Method of forming a metal-semiconductor contact, comprising the steps of: forming, on a semiconductor body having a first electrical conductivity, a first metal layer; performing a thermal treatment of at least a portion of the first metal layer by a LASER beam having an incidence direction on the first metal layer, including heating the portion of the first metal layer, along said incidence direction, at a temperature between 1500° C. and 3000° C.

公开(公告)号：US20250046665A1

公开(公告)日：2025-02-06

申请号：US18363149

申请日：2023-08-01

Applicant: STMicroelectronics International N.V.

Inventor： Gabriele BELLOCCHI ,  Simone RASCUNA' ,  Giacomo TORRISI

IPC: H01L23/31 ,  H01L21/02 ,  H01L21/768

Abstract: Methods, systems, and devices for improving passivation layer durability are described. A device may include a semiconductor substrate elongated along a first direction and a second direction. The first direction may be parallel to a width of the semiconductor substrate and the second direction may be parallel to a depth of the semiconductor substrate. The device may include one or more layers formed above the semiconductor substrate with respect to a third direction parallel to a height of the semiconductor substrate. At least a region of the one or more layers may include circuitry. The device may include a passivation layer formed above the one or more layers with respect to the third direction. The passivation layer may include a plurality of cavities that each extend through the passivation layer. The plurality of cavities and the circuitry may be non-overlapping with respect to the first direction and the second direction.

公开(公告)号：US20250113506A1

公开(公告)日：2025-04-03

申请号：US18376091

申请日：2023-10-03

Applicant: STMicroelectronics International N.V.

Inventor： Simone RASCUNA' ,  Gabriele BELLOCCHI ,  Paolo BADALA' ,  Marilena VIVONA ,  Fabrizio ROCCAFORTE

IPC: H01L29/66 ,  H01L21/04 ,  H01L29/16 ,  H01L29/45 ,  H01L29/47 ,  H01L29/872

Abstract: Methods, systems, and apparatuses for one step formation of ohmic contacts and Schottky contacts for SiC power devices by using laser annealing are provided. An SiC power device may include a back-side ohmic contact, a n+ substrate, a n− epitaxial layer, one or more p+ regions, one or more carbon layers, one or more ohmic contacts, and a Schottky contact. The one or more ohmic contacts and Schottky contact may be formed in a one step operation that may include laser annealing. During manufacturing, a metallization layer applied above the carbon layers and n-epitaxial layer may form the ohmic contacts and Schottky contacts when the annealing is performed.