公开(公告)号：US20150078069A1

公开(公告)日：2015-03-19

申请号：US14478477

申请日：2014-09-05

Applicant: STMicroelectronics International N.V.

Inventor： Jacques Talayssat

IPC: G11C11/419 ,  H01L27/11 ,  G11C8/10

CPC classification number: G11C11/419 ,  G11C8/10 ,  H01L21/761 ,  H01L21/823892 ,  H01L27/0928 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/1104

Abstract: An integrated circuit includes first and second circuit parts that may be arranged close to one another in a single semiconducting substrate. The circuit may use a deep doping well for reducing digital noise, and may implement a sleep mode for reducing power consumption. This circuit may have a random access memory, and may be a radio communication system-on-chip device. The integrated circuit may advantageously be used within a mobile communication apparatus.

Abstract translation: 集成电路包括可以在单个半导体衬底中彼此靠近布置的第一和第二电路部分。 电路可以使用深掺杂阱来减少数字噪声，并且可以实现睡眠模式以降低功耗。 该电路可以具有随机存取存储器，并且可以是无线电通信片上系统设备。 集成电路可以有利地在移动通信设备内使用。

公开(公告)号：US09601185B2

公开(公告)日：2017-03-21

申请号：US14478477

申请日：2014-09-05

Applicant: STMicroelectronics International N.V.

Inventor： Jacques Talayssat

IPC: G11C11/419 ,  G11C8/10 ,  H01L27/11 ,  H01L21/8238 ,  H01L21/761 ,  H01L27/092 ,  H01L27/108

CPC classification number: G11C11/419 ,  G11C8/10 ,  H01L21/761 ,  H01L21/823892 ,  H01L27/0928 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/1104

Abstract: An integrated circuit includes first and second circuit parts that may be arranged close to one another in a single semiconducting substrate. The circuit may use a deep doping well for reducing digital noise, and may implement a sleep mode for reducing power consumption. This circuit may have a random access memory, and may be a radio communication system-on-chip device. The integrated circuit may advantageously be used within a mobile communication apparatus.