公开(公告)号：US20220077776A1

公开(公告)日：2022-03-10

申请号：US17016588

申请日：2020-09-10

Applicant: STMicroelectronics International N.V.

Inventor： Pravesh Kumar SAINI

IPC: H02M3/158 ,  H02M1/088

Abstract: A power transistor and a cascode transistor are connected in series. A driver circuit has an output driving a control terminal of the power transistor. The driver circuit has a first power supply node coupled to receive a floating voltage that is also applied to a control terminal of the cascode transistor. A variable voltage generator generates the floating voltage. The floating voltage track either a power supply voltage or a reference voltage over a first range of voltage levels for the power supply voltage. The floating voltage further satisfies a ratio metric relationship dependent on the power supply voltage and reference voltage over a second range of voltage levels for said power supply voltage.

公开(公告)号：US20230168300A1

公开(公告)日：2023-06-01

申请号：US18053688

申请日：2022-11-08

Applicant: STMICROELECTRONICS S.r.l. ,  STMicroelectronics International N.V.

Inventor： Mauro GIACOMINI ,  Fabio Enrico Carlo DISEGNI ,  Rajesh NARWAL ,  Pravesh Kumar SAINI ,  Mayankkumar HARESHBHAI NIRANJANI

IPC: G01R31/315 ,  H01L21/66

CPC classification number: G01R31/315 ,  H01L22/12

Abstract: An assembly for detecting a structural defect in a semiconductor die is provided. The assembly includes a defect-detection sensor and a microcontroller. The defect-detection sensor includes a plurality of resistive paths of electrical-conductive material in the semiconductor die, each of which has a first end and a second end and extends proximate a perimeter of the semiconductor die. The defect-detection sensor includes a plurality of signal-generation structures, each coupled to a respective resistive path and configured to supply a test signal to the resistive path. The microcontroller is configured to control the signal-generation structures to generate the test signals, acquire the test signals in each resistive paths, test an electrical feature of the resistive paths by performing an analysis of the test signals acquired and detect the presence of the structural defect in the semiconductor die based on a result of the analysis of the test signals acquired.

公开(公告)号：US20240405538A1

公开(公告)日：2024-12-05

申请号：US18326877

申请日：2023-05-31

Applicant: STMicroelectronics International N.V.

Inventor： Mayankkumar HARESHBHAI NIRANJANI ,  Rajesh NARWAL ,  Pravesh Kumar SAINI

IPC: H02H1/00 ,  H02H3/20

Abstract: A supply voltage detector of an integrated circuit is able to detect the state of a supply voltage upon startup with both high-speed and low overall power consumption. The supply voltage detector includes a comparator that generates an output voltage based on the current state of the supply voltage. The comparator includes a startup current booster that generates a supplemental current for the comparator while the supply voltage is ramping up. The start of current booster stops generating the supplemental current when the supply voltage reaches the expected steady-state value or a selected fraction or portion of the expected steady-state value.