公开(公告)号：US20230168300A1

公开(公告)日：2023-06-01

申请号：US18053688

申请日：2022-11-08

Applicant: STMICROELECTRONICS S.r.l. ,  STMicroelectronics International N.V.

Inventor： Mauro GIACOMINI ,  Fabio Enrico Carlo DISEGNI ,  Rajesh NARWAL ,  Pravesh Kumar SAINI ,  Mayankkumar HARESHBHAI NIRANJANI

IPC: G01R31/315 ,  H01L21/66

CPC classification number: G01R31/315 ,  H01L22/12

Abstract: An assembly for detecting a structural defect in a semiconductor die is provided. The assembly includes a defect-detection sensor and a microcontroller. The defect-detection sensor includes a plurality of resistive paths of electrical-conductive material in the semiconductor die, each of which has a first end and a second end and extends proximate a perimeter of the semiconductor die. The defect-detection sensor includes a plurality of signal-generation structures, each coupled to a respective resistive path and configured to supply a test signal to the resistive path. The microcontroller is configured to control the signal-generation structures to generate the test signals, acquire the test signals in each resistive paths, test an electrical feature of the resistive paths by performing an analysis of the test signals acquired and detect the presence of the structural defect in the semiconductor die based on a result of the analysis of the test signals acquired.

公开(公告)号：US20240413742A1

公开(公告)日：2024-12-12

申请号：US18332183

申请日：2023-06-09

Applicant: STMicroelectronics International N.V.

Inventor： Mayankkumar HARESHBHAI NIRANJANI ,  Rik PAUL ,  Rajesh NARWAL

IPC: H02M1/36 ,  H02M1/44 ,  H02M3/155 ,  H02M7/217

Abstract: An example power management unit utilizing an example circuit to disable a voltage regulator is provided. The example circuit includes a voltage selection circuit and a power-down switching device. The voltage selection circuit configured to receive a first voltage source and a second voltage source to output a selected voltage based on the higher of the two input voltages. The voltage selection circuit utilizes a first transistor electrically connected in parallel with a second transistor between the first voltage source and the second voltage source to generate the selected voltage. The second transistor gate voltage at the second transistor gate is generated based at least in part on a voltage at the first transistor drain. The selected voltage is generated based on a voltage at the second transistor drain. The power-down switching device is configured to generate a voltage for a voltage regulator based on the selected voltage.

公开(公告)号：US20240405538A1

公开(公告)日：2024-12-05

申请号：US18326877

申请日：2023-05-31

Applicant: STMicroelectronics International N.V.

Inventor： Mayankkumar HARESHBHAI NIRANJANI ,  Rajesh NARWAL ,  Pravesh Kumar SAINI

IPC: H02H1/00 ,  H02H3/20

Abstract: A supply voltage detector of an integrated circuit is able to detect the state of a supply voltage upon startup with both high-speed and low overall power consumption. The supply voltage detector includes a comparator that generates an output voltage based on the current state of the supply voltage. The comparator includes a startup current booster that generates a supplemental current for the comparator while the supply voltage is ramping up. The start of current booster stops generating the supplemental current when the supply voltage reaches the expected steady-state value or a selected fraction or portion of the expected steady-state value.