公开(公告)号：US20140363953A1

公开(公告)日：2014-12-11

申请号：US14298073

申请日：2014-06-06

Applicant: STMicroelectronics S.A.

Inventor： Didier Dutartre

IPC: H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L21/762 ,  H01L29/16

CPC classification number: H01L29/78 ,  H01L21/7624 ,  H01L21/76283 ,  H01L21/84 ,  H01L29/1054 ,  H01L29/16 ,  H01L29/66575 ,  H01L29/78684 ,  H01L29/78687

Abstract: A method for manufacturing components on an SOI layer coated with a silicon-germanium layer formed by epitaxial deposition, wherein the heat balance of the anneals performed after the epitaxial deposition is such that the germanium concentration remains higher in the silicon-germanium layer than in the SOI layer.

Abstract translation: 一种用于在外延沉积形成的涂覆有硅 - 锗层的SOI层上制造部件的方法，其中在外延沉积之后执行的退火的热平衡使得硅 - 锗层中的锗浓度保持在比在 SOI层。