公开(公告)号：US20030071687A1

公开(公告)日：2003-04-17

申请号：US10245842

申请日：2002-09-17

Applicant: STMicroelectronics S.A.

Inventor： Marius Reffay ,  Michel Barou

IPC: H03F003/18

CPC classification number: H03F1/308 ,  H03F1/3217

Abstract: A class AB amplifier circuit includes a complementary output stage and a biasing circuit for biasing the output stage. The complementary output stage includes a P-type MOS transistor and an N-type MOS transistor, and the biasing circuit includes a bipolar transistor. The emitter and collector of the bipolar transistor are respectively connected to the gates of the P-type and N-type MOS transistors. The bipolar transistor is biased for controlling a bias voltage between the respective gates of the P-type and N-type MOS transistors.

Abstract translation: AB类放大器电路包括互补输出级和用于偏置输出级的偏置电路。 互补输出级包括P型MOS晶体管和N型MOS晶体管，偏置电路包括双极晶体管。 双极晶体管的发射极和集电极分别连接到P型和N型MOS晶体管的栅极。 双极晶体管被偏置用于控制P型和N型MOS晶体管的各个栅极之间的偏置电压。