公开(公告)号：US20140197452A1

公开(公告)日：2014-07-17

申请号：US14150264

申请日：2014-01-08

Applicant: STMicroelectronics S.r.I.

Inventor： Leonardo Fragapane ,  Antonino Alessandria

IPC: H01L29/739 ,  H01L29/66

CPC classification number: H01L29/4236 ,  H01L29/1095 ,  H01L29/401 ,  H01L29/66348 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7827

Abstract: A device includes an epitaxial region extending into a front surface of a chip. A portion of the chip adjacent the epitaxial region defines a collector. A gate is provided in a trench extending into the epitaxial region from the front surface. An emitter includes a body extending into the epitaxial region at a first side of the trench and a source extending into the body region from the front surface at the trench. A dummy emitter extends into the epitaxial region from the front surface at a second side of the trench opposite said first side. The dummy emitter lacks the source. The gate extends along a first wall of the trench facing the emitter region. A dummy gate is formed in the trench in a manner electrically isolated from the gate and extending along a second wall of the trench opposite said first wall.

Abstract translation: 一种器件包括延伸到芯片前表面的外延区域。 与外延区域相邻的芯片的一部分限定了集电极。 栅极设置在从前表面延伸到外延区域的沟槽中。 发射器包括在沟槽的第一侧延伸到外延区域中的主体和从沟槽的前表面延伸到主体区域中的源极。 虚拟发射器在与第一侧相对的沟槽的第二侧处从前表面延伸到外延区域中。 虚拟发射器缺乏源。 栅极沿面向发射极区域的沟槽的第一壁延伸。 在沟槽中以与栅极电隔离并沿着与第一壁相对的沟槽的第二壁延伸的方式形成虚拟栅极。