公开(公告)号：US20030122221A1

公开(公告)日：2003-07-03

申请号：US10323961

申请日：2002-12-18

Applicant: STMicroelectronics S.r.I.

Inventor： Giorgio De Santi ,  Luca Zanotti

IPC: H01L023/58

CPC classification number: H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/3185 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A process for forming a final passivation layer over an integrated circuit comprises a step of forming, over a surface of the integrated circuit, a protective film by means of High-Density Plasma Chemical Vapor Deposition.

Abstract translation: 用于在集成电路上形成最终钝化层的工艺包括通过高密度等离子体化学气相沉积在集成电路的表面上形成保护膜的步骤。