公开(公告)号：US09240457B2

公开(公告)日：2016-01-19

申请号：US14162200

申请日：2014-01-23

Applicant: STMicroelectronics S.r.I.

Inventor： Davide Giuseppe Patti ,  Giuditta Settanni

IPC: H01L21/332 ,  H01L29/66 ,  H01L29/10 ,  H01L29/739

CPC classification number: H01L29/66333 ,  H01L29/1095 ,  H01L29/66325 ,  H01L29/7395

Abstract: An IGBT transistor includes a drift region, at least one body region housed in the drift region and having a first type of conductivity, and a conduction region, which crosses the body region in a direction perpendicular to a surface of the drift region and has the first type of conductivity and a lower resistance than the body region. The conduction region includes a plurality of implant regions, arranged at respective depths from the surface of the drift region.

Abstract translation: IGBT晶体管包括漂移区域，容纳在漂移区域中并且具有第一类型的导电性的至少一个体区和在垂直于漂移区域的表面的方向上穿过身体区域的导电区域，并且具有 第一类导电性和比身体区域更低的电阻。 导电区域包括多个植入区域，其布置在距漂移区域的表面相应的深度处。