公开(公告)号：US20240363695A1

公开(公告)日：2024-10-31

申请号：US18771277

申请日：2024-07-12

申请人： Flosfia Inc.

发明人： Takashi SHINOHE ,  Mitsuru OKIGAWA ,  Koji AMAZUTSUMI ,  Yasushi HIGUCHI ,  Tokiyoshi MATSUDA

IPC分类号： H01L29/24 ,  H01L29/739 ,  H01L29/778 ,  H01L29/868 ,  H01L29/872

CPC分类号： H01L29/24 ,  H01L29/7395 ,  H01L29/7786 ,  H01L29/868 ,  H01L29/872

摘要： Provided is a semiconductor device including at least: an n type oxide semiconductor layer; a first p type oxide semiconductor layer that forms a main junction with the n type oxide semiconductor layer, and a hole supply layer, wherein the hole supply layer includes a second p type oxide semiconductor layer that is different from the first p type oxide semiconductor layer.

公开(公告)号：US12087816B2

公开(公告)日：2024-09-10

申请号：US17716555

申请日：2022-04-08

申请人： Infineon Technologies Dresden GmbH & Co. KG

发明人： Hans-Juergen Thees ,  Stefan Loesch ,  Marc Probst ,  Tom Richter ,  Olaf Storbeck

IPC分类号： H01L29/06 ,  H01L29/66 ,  H01L29/739

CPC分类号： H01L29/0696 ,  H01L29/66333 ,  H01L29/7395

摘要： A power semiconductor device includes a control cell for controlling a load current and electrically connected to a load terminal structure on one side and to a drift region on another side. The drift region includes dopants of a first conductivity type. The control cell includes: a mesa extending along a vertical direction and including a contact region having dopants of the first or second conductivity type and electrically connected to the load terminal structure, and a channel region coupled to the drift region; a control electrode configured to control a conduction channel in the channel region; and a contact plug including at least one of a doped semiconductive material or metal, and arranged in contact with the contact region. An electrical connection between the contact region and load terminal structure is established by the contact plug, a portion of which horizontally projects beyond lateral boundaries of the mesa.

公开(公告)号：US12074201B2

公开(公告)日：2024-08-27

申请号：US17588558

申请日：2022-01-31

申请人： ROHM CO., LTD.

发明人： Takuji Maekawa ,  Mitsuru Morimoto

IPC分类号： H01L21/02 ,  H01L29/04 ,  H01L29/16 ,  H01L29/739 ,  H01L29/78 ,  H01L29/872

CPC分类号： H01L29/1608 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02516 ,  H01L21/02529 ,  H01L21/02595 ,  H01L29/045 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7813 ,  H01L29/872

摘要： A semiconductor substrate includes a drift layer of a first layer formed of a single crystal SiC semiconductor and a buffer layer and a substrate layer of a second layer that is formed of a SiC semiconductor which includes a polycrystalline structure and is formed on the surface of the first layer, in which the second layer (12) is formed on the surface of the drift layer of the first layer by means of CVD growth, the drift layer of the first layer is formed by means of epitaxial growth, and accordingly, defects occurring at a junction interface of the semiconductor substrate including the single crystal SiC layer and the polycrystal SiC layer are suppressed, and manufacturing costs are also reduced.

公开(公告)号：US20240250131A1

公开(公告)日：2024-07-25

申请号：US18005618

申请日：2022-01-21

申请人： CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO. 24 RESEARCH INSTITUTE

发明人： Kaizhou TAN ,  Tian XIAO ,  Jiahao ZHANG ,  Yonghui YANG ,  Hequan JIANG ,  Ruzhang LI ,  Peijian ZHANG ,  Yi ZHONG ,  Peng WANG ,  Yuxin WANG ,  Xiaojun FU ,  Zhaohuan TANG

IPC分类号： H01L29/40 ,  H01L29/06 ,  H01L29/732 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861

CPC分类号： H01L29/405 ,  H01L29/063 ,  H01L29/404 ,  H01L29/732 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/861

摘要： The disclosure provides a power semiconductor device and manufacturing method thereof. A plurality of second resistive field plate structures extending through an epitaxial layer in a first direction into a substrate are arranged in a termination region of the epitaxial layer and the plurality of second resistive field plate structures are arranged radially in a first plane. A plurality of tightly coupled second resistive field plates extending from a side close to a cell region to a side far away from the cell region form a more uniform three-dimensional electric field distribution diverging around the cell region, which optimizes a guiding and binding effect on a charge in a space depletion region of the cell region and improves a withstand voltage performance of the whole power semiconductor device.

公开(公告)号：US12040363B2

公开(公告)日：2024-07-16

申请号：US17588558

申请日：2022-01-31

申请人： ROHM CO., LTD.

发明人： Takuji Maekawa ,  Mitsuru Morimoto

IPC分类号： H01L21/02 ,  H01L29/04 ,  H01L29/16 ,  H01L29/739 ,  H01L29/78 ,  H01L29/872

CPC分类号： H01L29/1608 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02516 ,  H01L21/02529 ,  H01L21/02595 ,  H01L29/045 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7813 ,  H01L29/872

摘要： A semiconductor substrate includes a drift layer of a first layer formed of a single crystal SiC semiconductor and a buffer layer and a substrate layer of a second layer that is formed of a SiC semiconductor which includes a polycrystalline structure and is formed on the surface of the first layer, in which the second layer (12) is formed on the surface of the drift layer of the first layer by means of CVD growth, the drift layer of the first layer is formed by means of epitaxial growth, and accordingly, defects occurring at a junction interface of the semiconductor substrate including the single crystal SiC layer and the polycrystal SiC layer are suppressed, and manufacturing costs are also reduced.

公开(公告)号：US20240194779A1

公开(公告)日：2024-06-13

申请号：US18522816

申请日：2023-11-29

申请人： Infineon Technologies Austria AG

发明人： Christian Zmölnig ,  Markus Kahn ,  Juergen Steinbrenner ,  Oliver Humbel ,  Angelika Koprowski ,  Thomas Kurzmann

IPC分类号： H01L29/78 ,  H01L29/06

CPC分类号： H01L29/7811 ,  H01L29/0611 ,  H01L29/7395

摘要： The application refers to a semiconductor device including: a semiconductor body having a first surface and a second surface; an active region having at least one semiconductor cell configured to conduct a load current between the first surface and the second surface; an edge termination region separating the active region from a chip edge; and a first layer within at least a part of the edge termination region. The first layer includes silicon, nitrogen and hydrogen. In atomic numbers, a ratio of the silicon to the nitrogen is at least 3.3 to 4 in at least a portion of the first layer. At least the portion of the first layer includes at most 16 percent hydrogen in atomic numbers.

公开(公告)号：US20240162284A1

公开(公告)日：2024-05-16

申请号：US18472175

申请日：2023-09-21

申请人： FUJI ELECTRIC CO., LTD.

发明人： Hiroshi TAKISHITA ,  Yuusuke OOSHIMA ,  Takashi YOSHIMURA ,  Shuntaro YAGUCHI

IPC分类号： H01L29/06 ,  H01L29/36 ,  H01L29/66 ,  H01L29/739 ,  H01L29/861

CPC分类号： H01L29/0615 ,  H01L29/0684 ,  H01L29/36 ,  H01L29/66333 ,  H01L29/7395 ,  H01L29/8611

摘要： A manufacturing method of a semiconductor device including a buffer region in a semiconductor substrate is provided, comprising: obtaining a substrate concentration index related to at least one of an oxygen chemical concentration or a carbon chemical concentration included in the semiconductor substrate; classifying the substrate concentration index as any index range among a predetermined plurality of index ranges; determining an acceleration energy of hydrogen ions to be implanted into the semiconductor substrate to an acceleration energy that is preset to correspond to the classified index range; and forming a buffer region of the semiconductor device by implanting hydrogen ions into the semiconductor substrate with the determined acceleration energy.

公开(公告)号：US11984481B2

公开(公告)日：2024-05-14

申请号：US18121691

申请日：2023-03-15

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Hiroshi Hashigami

IPC分类号： H01L29/22 ,  C01G15/00 ,  H01L21/02 ,  H01L29/739 ,  H01L29/778 ,  H01L29/78

CPC分类号： H01L29/2206 ,  C01G15/006 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02483 ,  H01L21/02496 ,  H01L29/78 ,  H01L21/0262 ,  H01L29/7395 ,  H01L29/7786

摘要： A mist-CVD apparatus contains a first atomizer for atomizing a first metal oxide precursor and generating a first mist of the first metal oxide precursor; a second atomizer for atomizing a second metal oxide precursor and generating a second mist of the second metal oxide precursor; a carrier-gas supplier for supplying a carrier gas to convey the first and second mists; a film-forming unit for forming a film on a substrate by subjecting the first and second mists to a thermal reaction; and a first conveyance pipe through which the first mist and the carrier gas are conveyed to the film forming chamber, a second conveyance pipe through which the second mist and the carrier gas are conveyed to the film forming chamber.

公开(公告)号：US11973114B2

公开(公告)日：2024-04-30

申请号：US17499579

申请日：2021-10-12

申请人： Purdue Research Foundation

发明人： James A. Cooper

IPC分类号： H01L29/10 ,  H01L29/06 ,  H01L29/08 ,  H01L29/16 ,  H01L29/49 ,  H01L29/66 ,  H01L29/739 ,  H01L29/78

CPC分类号： H01L29/1037 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/4916 ,  H01L29/66681 ,  H01L29/66795 ,  H01L29/7802 ,  H01L29/7803 ,  H01L29/7835 ,  H01L29/785 ,  H01L29/0696 ,  H01L29/0865 ,  H01L29/7395

摘要： A semiconductor device includes at least a first lateral MOSFET formed on a semiconductor substrate. The first lateral MOSFET has an interface defined by a plurality of trenches along which the current flow can be modulated by a perpendicular electric field. The portion of the interface lies on a plane substantially perpendicular to the plane of the substrate. The interface is configured such that at least a portion of the current flow along the portion of the interface that lies on a plane substantially perpendicular to the plane of the substrate is in a direction substantially parallel to the plane of the substrate.

公开(公告)号：US20240128359A1

公开(公告)日：2024-04-18

申请号：US18395662

申请日：2023-12-25

申请人： FUJI ELECTRIC CO., LTD.

发明人： Motoyoshi KUBOUCHI

IPC分类号： H01L29/739 ,  H01L21/22 ,  H01L29/10 ,  H01L29/423 ,  H01L29/66

CPC分类号： H01L29/7395 ,  H01L21/221 ,  H01L29/1095 ,  H01L29/4236 ,  H01L29/66348

摘要： A method of manufacturing a semiconductor device comprising a transistor section and a diode section each having a drift region of a first conductivity-type inside a semiconductor substrate, and a base region of a second conductivity-type above the drift region. A particle beam is irradiated from an upper surface of the semiconductor substrate forming a lifetime control region including lifetime killers below the base region from at least a part of the transistor section to the diode section. A threshold value adjusting section is formed for adjusting a threshold value of the transistor section, including a thickened portion Wgi of a gate insulating film in a gate trench section adjacent to the base region, the thickened portion having a dielectric constant less than or equal to 0.9 times a remaining portion of the gate insulating film in the gate trench section.