公开(公告)号：US20020018390A1

公开(公告)日：2002-02-14

申请号：US09909467

申请日：2001-07-19

Applicant: STMicroelectronics S.r.I.

Inventor： Emanuele Confalonieri ,  Lorenzo Bedarida ,  Mauro Sali ,  Simone Bartoli

IPC: G11C005/14

CPC classification number: G11C16/30

Abstract: A semiconductor memory includes a plurality of memory cells connected to one another to form a matrix of memory cells. A charge pump is connected to the matrix of memory cells. A plurality of controllable connection elements are provided, with each controllable connection element connected between an output terminal of the charge pump and a respective column line. Connected to the output of the charge pump is the series connection of a first element equivalent to a controllable connection element, and a second element equivalent to a memory cell in a predetermined biasing condition. A voltage regulator is connected between the second equivalent element and the input terminal of the charge pump for regulating the output voltage therefrom based upon a voltage present between terminals of the second equivalent element.

公开(公告)号：US20030147293A1

公开(公告)日：2003-08-07

申请号：US10328721

申请日：2002-12-23

Applicant: STMicroelectronics S.r.I.

Inventor： Antonino Geraci ,  Alberto Campisi ,  Lorenzo Bedarida ,  Simone Bartoli

IPC: G11C029/00

CPC classification number: G11C29/44

Abstract: An autotesting method of a cells matrix of a memory device is disclosed which comprises the steps of: reading the values contained in a plurality of the memory cells; comparing the read values with reference values; signalling mismatch of the read values with the reference values as an error situation; and storing the error situations. In the autotesting method, the reading, comparing, signalling, and storing steps are repeated for all the memory cells in an matrix column. The autotesting method according to the invention further comprises the steps of storing the positions of any columns having at least one one error situation; and repeating all of the preceding steps according to a step of scanning all the matrix columns.

Abstract translation: 公开了一种存储器件的单元矩阵的自动测试方法，其包括以下步骤：读取多个存储器单元中包含的值; 将读取的值与参考值进行比较; 读取值与参考值的信令不匹配作为错误情况; 并存储错误情况。 在自动测试方法中，对矩阵列中的所有存储单元重复读取，比较，信令和存储步骤。 根据本发明的自动测试方法还包括以下步骤：存储具有至少一个错误情况的任何列的位置; 并且根据扫描所有矩阵列的步骤重复所有前述步骤。