公开(公告)号：US20020106888A1

公开(公告)日：2002-08-08

申请号：US10006923

申请日：2001-12-04

Applicant: STMicroelectronics S.r.I.

Inventor： Omar Vassalli ,  Massimiliano Gullotta

IPC: H01L021/4763 ,  H01L021/31 ,  H01L021/469

CPC classification number: H01L21/7682 ,  H01L21/3105

Abstract: A process that includes forming a metal layer on top of a wafer of semiconductor material; forming a mask having an appropriate geometry; defining the metal layer to form conductive lines in the metal layer according to the geometry of the mask; forming, on side walls of the mask a polymeric structure; selectively removing the mask; depositing, on the polymeric structure and on the conductive lines, an insulating material. The polymeric structure, made of an inorganic polymer, forms a nullsupporting bridgenull for the insulating material, preventing the latter from depositing in the gaps between the conductive lines. In these conditions, the gap between two adjacent conductive lines is occupied only by air, which has a very low dielectric constant. This results in a reduced capacitive coupling between the lines themselves.

Abstract translation: 一种方法，包括在半导体材料晶片的顶部上形成金属层; 形成具有适当几何形状的掩模; 限定所述金属层，以根据所述掩模的几何形状在所述金属层中形成导电线; 在所述面具的侧壁上形成聚合物结构; 选择性地去除掩模; 在聚合物结构上和导电线上沉积绝缘材料。 由无机聚合物制成的聚合物结构形成用于绝缘材料的“支撑桥”，防止其沉积在导电线之间的间隙中。 在这些条件下，两个相邻导电线之间的间隙仅由具有非常低介电常数的空气占据。 这导致线路本身之间的电容耦合减小。