公开(公告)号：US20220246723A1

公开(公告)日：2022-08-04

申请号：US17579474

申请日：2022-01-19

Applicant: STMicroelectronics S.r.l.

Inventor： Mario Giuseppe SAGGIO ,  Alessia Maria FRAZZETTO ,  Edoardo ZANETTI ,  Alfio GUARNERA

IPC: H01L29/08 ,  H01L29/16 ,  H01L29/10 ,  H01L29/78 ,  H01L21/04 ,  H01L29/66

Abstract: A vertical conduction MOSFET device includes a body of silicon carbide having a first conductivity type and a face. A metallization region extends on the face of the body. A body region of a second conductivity type extends in the body, from the face of the body, along a first direction parallel to the face and along a second direction transverse to the face. A source region of the first conductivity type extends towards the inside of the body region, from the face of the body. The source region has a first portion and a second portion. The first portion has a first doping level and extends in direct electrical contact with the metallization region. The second portion has a second doping level and extends in direct electrical contact with the first portion of the source region. The second doping level is lower than the first doping level.

公开(公告)号：US20220246729A1

公开(公告)日：2022-08-04

申请号：US17565165

申请日：2021-12-29

Applicant: STMicroelectronics S.r.l.

Inventor： Mario Giuseppe SAGGIO ,  Edoardo ZANETTI ,  Alessia Maria FRAZZETTO ,  Alfio GUARNERA ,  Cateno Marco CAMALLERI ,  Antonio Giuseppe GRIMALDI

IPC: H01L29/16 ,  H01L21/04 ,  H01L29/10 ,  H01L21/265

Abstract: A vertical conduction MOSFET device includes a body of silicon carbide, which has a first type of conductivity and a face. A superficial body region of a second type of conductivity has a first doping level and extends into the body to a first depth , and has a first width. A source region of the first type of conductivity extends into the superficial body region to a second depth, and has a second width. The second depth is smaller than the first depth and the second width is smaller than the first width. A deep body region of the second type of conductivity has a second doping level and extends into the body, at a distance from the face of the body and in direct electrical contact with the superficial body region, and the second doping level is higher than the first doping level.