公开(公告)号：US20220005702A1

公开(公告)日：2022-01-06

申请号：US17368437

申请日：2021-07-06

Applicant: STMicroelectronics S.r.l.

Inventor： Nicolo' PILUSO ,  Andrea SEVERINO ,  Stefania RINALDI Beatrice ,  AngeloAnnibale MAZZEO ,  Leonardo CAUDO ,  Alfio RUSSO ,  Giovanni FRANCO ,  Anna BASSI

IPC: H01L21/306 ,  H01L21/02

Abstract: A process for manufacturing a silicon carbide semiconductor device includes providing a silicon carbide wafer, having a substrate. An epitaxial growth for formation of an epitaxial layer, having a top surface, is carried out on the substrate. Following upon the step of carrying out an epitaxial growth, the process includes the step of removing a surface portion of the epitaxial layer starting from the top surface so as to remove surface damages present at the top surface as a result of propagation of dislocations from the substrate during the previous epitaxial growth and so as to define a resulting top surface substantially free of defects.