公开(公告)号：US20020155673A1

公开(公告)日：2002-10-24

申请号：US10032334

申请日：2001-12-18

Applicant: STMicroelectronics S.r.l.

Inventor： Cateno M. Camalleri ,  Simona Lorenti ,  Denise Cali ,  Patrizia Vasquez ,  Giuseppe Ferla

IPC: H01L021/331

CPC classification number: H01L29/66272 ,  H01L21/2256 ,  H01L29/7311

Abstract: A method of controlling the quantity and uniformity of distribution of bonded oxygen atoms at the interface between the polysilicon and the monocrystalline silicon includes carrying out, after having loaded the wafer inside the heated chamber of the reactor and evacuated the chamber of the LPCVD reactor under nitrogen atmosphere, a treatment of the wafer with hydrogen at a temperature generally between 500 and 1200null C. and at a vacuum generally between 0.1 Pa and 60000 Pa. The treatment is performed at a time generally between 0.1 and 120 minutes, to remove any and all the oxygen that may have combined with the silicon on the surface of the monocrystalline silicon during the loading inside the heated chamber of the reactor even if it is done under a nitrogen flux. After such a hydrogen treatment, another treatment is carried out substantially under the same vacuum conditions and at a temperature generally between 700 and 1000null C. with nitrogen protoxide (N2O) for a time generally between 0.1 and 120 minutes.

Abstract translation: 控制在多晶硅和单晶硅之间的界面处的键合氧原子的分布的数量和均匀性的方法包括在将晶片装载在反应器的加热室内并在氮气下排空LPCVD反应器的腔室之前进行 通常在500至1200℃之间的氢气和通常在0.1Pa至60000Pa之间的真空下处理晶片，该处理通常在0.1至120分钟之间进行，以除去任何和 即使在氮气通量下进行，也可能在负载在反应器加热室内的单晶硅表面上与硅结合的全部氧。 在这样的氢处理之后，基本上在相同的真空条件下和通常在700和1000℃之间的温度下用氮氧化丙烷（N 2 O）进行另外的处理一般在0.1和120分钟之间的时间。