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公开(公告)号:US20180342426A1
公开(公告)日:2018-11-29
申请号:US16053737
申请日:2018-08-02
发明人: Li-Wei Feng , Shih-Hung Tsai , Chao-Hung Lin , Hon-Huei Liu , Shih-Fang Hong , Jyh-Shyang Jenq
IPC分类号: H01L21/8238 , H01L29/78 , H01L29/66 , H01L27/092 , H01L21/225 , H01L21/324
CPC分类号: H01L21/823821 , H01L21/2255 , H01L21/2256 , H01L21/324 , H01L21/823807 , H01L21/823814 , H01L21/823892 , H01L27/0924 , H01L29/66803 , H01L29/7851
摘要: A semiconductor device includes: a substrate having a first region and a second region; a first fin-shaped structure on the first region and a second fin-shaped structure on the second region, wherein each of the first fin-shaped structure and the second fin-shaped structure comprises a top portion and a bottom portion; a first doped layer around the bottom portion of the first fin-shaped structure; a second doped layer around the bottom portion of the second fin-shaped structure; a first liner on the first doped layer; and a second liner on the second doped layer.
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公开(公告)号:US20180182790A1
公开(公告)日:2018-06-28
申请号:US15815508
申请日:2017-11-16
发明人: Tadashi Yamaguchi
IPC分类号: H01L27/146 , H01L31/0288 , H01L21/225 , H01L21/02 , H01L21/762 , H01L21/223 , H01L31/18
CPC分类号: H01L27/1463 , H01L21/02057 , H01L21/0206 , H01L21/02164 , H01L21/02271 , H01L21/2236 , H01L21/2256 , H01L21/26513 , H01L21/266 , H01L21/31053 , H01L21/31111 , H01L21/76224 , H01L27/14612 , H01L27/14621 , H01L27/14627 , H01L27/14632 , H01L27/14636 , H01L27/14645 , H01L27/14685 , H01L27/14687 , H01L27/14689 , H01L29/167 , H01L31/0288 , H01L31/1864
摘要: The pixel characteristics are prevented from being degraded due to diffusion of electrons and Fe (iron) from the surface of an element isolation trench formed in the top surface of a semiconductor substrate into a photodiode forming the pixel of an image sensing element. Further, oxygen is prevented from being diffused from a boron oxide film formed at the surface of the element isolation trench into the photodiode. In the top surface of the semiconductor substrate, a trench for embedding an element isolation region surrounding a photodiode-forming region is formed. Then, B (boron) is doped into the surface of the trench to form a semiconductor layer. Subsequently, the boron oxide film resulting from the reaction between the boron deposited at the surface and oxygen is removed by APM washing. Then, a heat treatment is performed to diffuse the boron in the semiconductor layer.
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公开(公告)号:US09899529B2
公开(公告)日:2018-02-20
申请号:US15195886
申请日:2016-06-28
发明人: Joon Goo Hong , Borna Obradovic , Mark Rodder
IPC分类号: H01L21/22 , H01L29/786 , H01L29/423 , H01L29/06 , H01L29/66 , H01L21/225
CPC分类号: H01L29/78642 , H01L21/2256 , H01L29/0676 , H01L29/42392 , H01L29/66666 , H01L29/66742 , H01L29/66772 , H01L29/78618 , H01L29/78654 , H01L29/78684 , H01L29/78696
摘要: A method for making a self-aligned vertical nanosheet field effect transistor. A vertical trench is etched in a layered structure including a plurality of layers, using reactive ion etching, and filled, using an epitaxial process, with a vertical semiconductor nanosheet. A sacrificial layer from among the plurality of layers is etched out and replaced with a conductive (e.g., metal) gate layer coated with a high-dielectric-constant dielectric material. Two other layers from among the plurality of layers, one above and one below the gate layer, are doped, and act as dopant donors for a diffusion process that forms two PN junctions in the vertical semiconductor nanosheet.
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公开(公告)号:US09837469B1
公开(公告)日:2017-12-05
申请号:US15197099
申请日:2016-06-29
发明人: Seungmoo Choi , Sameer S. Haddad
CPC分类号: H01L27/2409 , G11C13/0023 , G11C13/004 , G11C13/0069 , G11C13/0097 , G11C17/06 , H01L21/2256 , H01L27/24 , H01L27/2463 , H01L29/6609 , H01L29/868 , H01L45/1608
摘要: An example system includes a processing circuit coupled to a memory system and an interface coupled between the processing circuit and a device. The memory system includes a resistive memory array comprising multiple memory structures. Each memory structure comprises a resistive memory cell and is associated with a P-I-N diode. The processing circuit is to access the resistive memory array responsive to a signal received from the device via the interface.
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公开(公告)号:US20170301771A1
公开(公告)日:2017-10-19
申请号:US15637266
申请日:2017-06-29
发明人: Mei-Ling Chen , Hung-Hsin Kuo
IPC分类号: H01L29/66 , H01L29/06 , H01L21/285 , H01L29/872 , H01L21/225
CPC分类号: H01L29/66143 , H01L21/2256 , H01L21/28537 , H01L29/0623 , H01L29/402 , H01L29/872
摘要: A method for fabricating a trench Schottky rectifier device is provided. At first, a plurality of trenched are formed in a substrate of a first conductivity type. An insulating layer is formed on sidewalls of the trenches. Then, an ion implantation procedure is performed through the trenches to form a plurality of doped regions of a second conductivity type under the trenches. Subsequently, the trenches are filled with conductive structure such as metal structure or tungsten structure. At last, an electrode overlying the conductive structure and the substrate is formed. Thus, a Schottky contact appears between the electrode and the substrate. Each doped region and the substrate will form a PN junction to pinch off current flowing toward the Schottky contact to suppress the current leakage in a reverse bias mode.
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公开(公告)号:US20170256542A1
公开(公告)日:2017-09-07
申请号:US15059516
申请日:2016-03-03
IPC分类号: H01L27/092 , H01L29/06 , H01L21/8238 , H01L29/66
CPC分类号: H01L21/2257 , H01L21/2255 , H01L21/2256 , H01L21/823807 , H01L21/823821 , H01L21/823892 , H01L27/0921 , H01L27/0924 , H01L29/0638 , H01L29/1083 , H01L29/16 , H01L29/66537 , H01L29/66803
摘要: A method for doping fins includes depositing a first dopant layer at a base of fins formed in a substrate, depositing a dielectric layer on the first dopant layer and etching the dielectric layer and the first dopant layer in a first region to expose the substrate and the fins. A second dopant layer is conformally deposited over the fins and the substrate in the first region. The second dopant layer is recessed to a height on the fins in the first region. An anneal is performed to drive dopants into the fins from the first dopant layer in a second region and from the second dopant layer in the first region to concurrently form punch through stoppers in the fins and wells in the substrate.
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公开(公告)号:US20170194481A1
公开(公告)日:2017-07-06
申请号:US15467100
申请日:2017-03-23
发明人: Hong He , Nicolas Loubet , Junli Wang
IPC分类号: H01L29/78 , H01L29/161 , H01L29/49 , H01L29/66
CPC分类号: H01L29/785 , H01L21/02236 , H01L21/02532 , H01L21/02592 , H01L21/2256 , H01L21/31116 , H01L29/1054 , H01L29/161 , H01L29/167 , H01L29/4966 , H01L29/66545 , H01L29/6656 , H01L29/66795 , H01L29/66818
摘要: A method for channel formation in a fin transistor includes removing a dummy gate and dielectric from a dummy gate structure to expose a region of an underlying fin and depositing an amorphous layer including Ge over the region of the underlying fin. The amorphous layer is oxidized to condense out Ge and diffuse the Ge into the region of the underlying fin to form a channel region with Ge in the fin.
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公开(公告)号:US09698224B2
公开(公告)日:2017-07-04
申请号:US14744510
申请日:2015-06-19
IPC分类号: H01L27/12 , H01L29/10 , H01L21/84 , H01L21/8238 , H01L27/092 , H01L29/161 , H01L29/16 , H01L21/225 , H01L21/324 , H01L29/66
CPC分类号: H01L29/1054 , H01L21/18 , H01L21/2256 , H01L21/324 , H01L21/823807 , H01L21/823821 , H01L21/845 , H01L27/0924 , H01L27/1211 , H01L29/16 , H01L29/161 , H01L29/66795
摘要: A method of forming a finFET device comprises forming a fin in a silicon layer of a substrate, forming a hardmask layer on a top surface of the fin, forming an insulating layer over the fin and the hardmask layer, removing a portion of the insulating layer to expose a portion of the hardmask layer, removing the exposed portion of the hardmask layer to form a cavity that exposes a portion of the silicon layer of the fin, epitaxially growing a silicon germanium (SiGe) material on exposed portions of the silicon layer of the fin in the cavity, and annealing the grown SiGe to drive germanium atoms into the silicon layer of the fin.
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公开(公告)号:US09601390B2
公开(公告)日:2017-03-21
申请号:US14959177
申请日:2015-12-04
IPC分类号: H01L21/70 , H01L21/84 , H01L29/66 , H01L21/8238
CPC分类号: H01L29/1054 , H01L21/18 , H01L21/2256 , H01L21/324 , H01L21/823807 , H01L21/823821 , H01L21/845 , H01L27/0924 , H01L27/1211 , H01L29/16 , H01L29/161 , H01L29/66795
摘要: A method of forming a finFET device comprises forming a fin in a silicon layer of a substrate, forming a hardmask layer on a top surface of the fin, forming an insulating layer over the fin and the hardmask layer, removing a portion of the insulating layer to expose a portion of the hardmask layer, removing the exposed portion of the hardmask layer to form a cavity that exposes a portion of the silicon layer of the fin, epitaxially growing a silicon germanium (SiGe) material on exposed portions of the silicon layer of the fin in the cavity, and annealing the grown SiGe to drive germanium atoms into the silicon layer of the fin.
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公开(公告)号:US09601333B2
公开(公告)日:2017-03-21
申请号:US14505064
申请日:2014-10-02
发明人: Ming-Hsi Yeh , Yih-Ann Lin , Bi-Ming Yen , Chao-Cheng Chen , Syun-Ming Jang
IPC分类号: H01L29/66 , H01L21/324 , H01L21/225 , H01L21/311 , H01L21/02
CPC分类号: H01L21/2256 , H01L21/02118 , H01L21/0212 , H01L21/02274 , H01L21/2255 , H01L21/31111 , H01L21/31138 , H01L21/31144 , H01L21/324 , H01L29/66795
摘要: A method includes providing a semiconductor substrate; forming a doping oxide layer on the semiconductor substrate; forming a patterning layer on the doping oxide layer, the patterning layer leaving exposed regions of the doping oxide layer; performing a sputtering process to the substrate; and after the sputtering process, performing a wet etching process to the semiconductor substrate to remove the doping oxide layer from the exposed regions.
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