公开(公告)号：US20040152249A1

公开(公告)日：2004-08-05

申请号：US10763626

申请日：2004-01-23

Applicant: STMicroelectronics S.r.l.

Inventor： Gianfranco Cerofolini ,  Giuseppe Ferla

IPC: H01L021/00 ,  H01L021/336 ,  H01L021/8234

CPC classification number: H01L21/28167 ,  H01L29/51

Abstract: A method of fabricating a MOS transistor with a controllable and modulatable conduction path through a dielectric gate oxide is disclosed, wherein the transistor structure comprises a dielectric oxide layer formed between two silicon plates, and wherein the silicon plates overhang the oxide layer all around to define an undercut having a substantially rectangular cross-sectional shape. The method comprises the steps of: chemically altering the surfaces of the silicon plates to have different functional groups provided in the undercut from those in the remainder of the surfaces; and selectively reacting the functional groups provided in the undercut with an organic molecule having a reversibly reducible center and a molecular length substantially equal to the width of the undercut, thereby to establish a covalent bond to each end of the organic molecule.

公开(公告)号：US20020155673A1

公开(公告)日：2002-10-24

申请号：US10032334

申请日：2001-12-18

Applicant: STMicroelectronics S.r.l.

Inventor： Cateno M. Camalleri ,  Simona Lorenti ,  Denise Cali ,  Patrizia Vasquez ,  Giuseppe Ferla

IPC: H01L021/331

CPC classification number: H01L29/66272 ,  H01L21/2256 ,  H01L29/7311

Abstract: A method of controlling the quantity and uniformity of distribution of bonded oxygen atoms at the interface between the polysilicon and the monocrystalline silicon includes carrying out, after having loaded the wafer inside the heated chamber of the reactor and evacuated the chamber of the LPCVD reactor under nitrogen atmosphere, a treatment of the wafer with hydrogen at a temperature generally between 500 and 1200null C. and at a vacuum generally between 0.1 Pa and 60000 Pa. The treatment is performed at a time generally between 0.1 and 120 minutes, to remove any and all the oxygen that may have combined with the silicon on the surface of the monocrystalline silicon during the loading inside the heated chamber of the reactor even if it is done under a nitrogen flux. After such a hydrogen treatment, another treatment is carried out substantially under the same vacuum conditions and at a temperature generally between 700 and 1000null C. with nitrogen protoxide (N2O) for a time generally between 0.1 and 120 minutes.

Abstract translation: 控制在多晶硅和单晶硅之间的界面处的键合氧原子的分布的数量和均匀性的方法包括在将晶片装载在反应器的加热室内并在氮气下排空LPCVD反应器的腔室之前进行 通常在500至1200℃之间的氢气和通常在0.1Pa至60000Pa之间的真空下处理晶片，该处理通常在0.1至120分钟之间进行，以除去任何和 即使在氮气通量下进行，也可能在负载在反应器加热室内的单晶硅表面上与硅结合的全部氧。 在这样的氢处理之后，基本上在相同的真空条件下和通常在700和1000℃之间的温度下用氮氧化丙烷（N 2 O）进行另外的处理一般在0.1和120分钟之间的时间。

公开(公告)号：US20030060028A1

公开(公告)日：2003-03-27

申请号：US10242293

申请日：2002-09-12

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Peter Ward ,  Simona Lorenti ,  Giuseppe Ferla

IPC: H01L021/331 ,  H01L021/20 ,  C30B001/00 ,  H01L021/36

CPC classification number: H01L21/02667 ,  H01L21/02532 ,  H01L21/2022

Abstract: A method for forming an interface free layer of silicon on a substrate of monocrystalline silicon is provided. According to the method, a substrate of monocrystalline silicon having a surface substantially free of oxide is provided. A silicon layer in-situ doped is deposited on the surface of the substrate in an oxygen-free environment and at a temperature below 700null C. so as to produce a monocrystalline portion of the silicon layer adjacent to the substrate and a polycrystalline portion of the silicon layer spaced apart from the substrate. The silicon layer is heated so as to grow the monocrystalline portion of the silicon layer through a part of the polycrystalline portion of the silicon layer. Also provided is a method for manufacturing a bipolar transistor.

Abstract translation: 提供了在单晶硅衬底上形成硅界面自由层的方法。 根据该方法，提供具有基本上不含氧化物的表面的单晶硅的衬底。 原位掺杂的硅层在无氧环境和低于700℃的温度下沉积在衬底的表面上，以便产生与衬底相邻的硅层的单晶部分和多晶部分 所述硅层与所述衬底间隔开。 加热硅层，以使硅层的单晶部分通过硅层的多晶部分的一部分生长。 还提供了制造双极晶体管的方法。