公开(公告)号：US11462269B2

公开(公告)日：2022-10-04

申请号：US17099257

申请日：2020-11-16

Applicant: STMicroelectronics S.r.l.

Inventor： Giovanni Campardo ,  Massimo Borghi ,  Paola Zuliani ,  Marco Barboni

IPC: G11C11/00 ,  G11C13/00 ,  H01L45/00

Abstract: An embodiment phase-change memory device includes a memory array provided with a plurality of phase-change memory cells, each having a body made of phase-change material and a first state, in which the phase-change material is completely in an amorphous phase, and at least one second state, in which the phase-change material is partially in the amorphous phase and partially in a crystalline phase. A programming-pulse generator applies to the memory cells rectangular dynamic-programming pulses having an amplitude and a duration calibrated for switching the memory cells from the first state to the second state.

公开(公告)号：US20210166757A1

公开(公告)日：2021-06-03

申请号：US17099257

申请日：2020-11-16

Applicant: STMicroelectronics S.r.l.

Inventor： Giovanni Campardo ,  Massimo Borghi ,  Paola Zuliani ,  Marco Barboni

IPC: G11C13/00 ,  H01L45/00

Abstract: An embodiment phase-change memory device includes a memory array provided with a plurality of phase-change memory cells, each having a body made of phase-change material and a first state, in which the phase-change material is completely in an amorphous phase, and at least one second state, in which the phase-change material is partially in the amorphous phase and partially in a crystalline phase. A programming-pulse generator applies to the memory cells rectangular dynamic-programming pulses having an amplitude and a duration calibrated for switching the memory cells from the first state to the second state.