公开(公告)号：US20250008847A1

公开(公告)日：2025-01-02

申请号：US18884913

申请日：2024-09-13

Applicant: STMicroelectronics S.r.l.

Inventor： Giovanni Campardo ,  Massimo Borghi

IPC: H10N70/20 ,  G11C13/00 ,  H01L23/528 ,  H10B63/00 ,  H10N70/00

Abstract: A phase-change memory (PCM) includes a semiconductor body housing a selection transistor; a electrical-insulation body disposed over the semiconductor body; a conductive region, extending through the electrical-insulation body, electrically coupled to the selection transistor; and a plurality of heater elements in the electrical-insulation body. Each of the plurality of heater elements include a first end in electrical contact with a respective portion of the conductive region and a second end that extends away from the conductive region. The PCM further includes a plurality of phase-change elements extending in the electrical-insulation body and including data storage regions, where each of the data storage regions being electrically and thermally coupled to one respective heater element at the second end of the respective heater element.

公开(公告)号：US12120967B2

公开(公告)日：2024-10-15

申请号：US17644942

申请日：2021-12-17

Applicant: STMicroelectronics S.r.l.

Inventor： Giovanni Campardo ,  Massimo Borghi

IPC: H10N70/20 ,  G11C13/00 ,  H01L23/528 ,  H10B63/00 ,  H10N70/00

CPC classification number: H10N70/231 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0069 ,  H01L23/5286 ,  H10B63/30 ,  H10N70/021 ,  G11C2013/0045 ,  G11C2213/79

Abstract: A phase-change memory (PCM) includes a semiconductor body housing a selection transistor; a electrical-insulation body disposed over the semiconductor body; a conductive region, extending through the electrical-insulation body, electrically coupled to the selection transistor; and a plurality of heater elements in the electrical-insulation body. Each of the plurality of heater elements include a first end in electrical contact with a respective portion of the conductive region and a second end that extends away from the conductive region. The PCM further includes a plurality of phase-change elements extending in the electrical-insulation body and including data storage regions, where each of the data storage regions being electrically and thermally coupled to one respective heater element at the second end of the respective heater element.

公开(公告)号：US11462269B2

公开(公告)日：2022-10-04

申请号：US17099257

申请日：2020-11-16

Applicant: STMicroelectronics S.r.l.

Inventor： Giovanni Campardo ,  Massimo Borghi ,  Paola Zuliani ,  Marco Barboni

IPC: G11C11/00 ,  G11C13/00 ,  H01L45/00

Abstract: An embodiment phase-change memory device includes a memory array provided with a plurality of phase-change memory cells, each having a body made of phase-change material and a first state, in which the phase-change material is completely in an amorphous phase, and at least one second state, in which the phase-change material is partially in the amorphous phase and partially in a crystalline phase. A programming-pulse generator applies to the memory cells rectangular dynamic-programming pulses having an amplitude and a duration calibrated for switching the memory cells from the first state to the second state.

公开(公告)号：US20220199900A1

公开(公告)日：2022-06-23

申请号：US17644942

申请日：2021-12-17

Applicant: STMicroelectronics S.r.l.

Inventor： Giovanni Campardo ,  Massimo Borghi

IPC: H01L45/00 ,  G11C13/00 ,  H01L27/24 ,  H01L23/528

Abstract: A phase-change memory (PCM) includes a semiconductor body housing a selection transistor; a electrical-insulation body disposed over the semiconductor body; a conductive region, extending through the electrical-insulation body, electrically coupled to the selection transistor; and a plurality of heater elements in the electrical-insulation body. Each of the plurality of heater elements include a first end in electrical contact with a respective portion of the conductive region and a second end that extends away from the conductive region. The PCM further includes a plurality of phase-change elements extending in the electrical-insulation body and including data storage regions, where each of the data storage regions being electrically and thermally coupled to one respective heater element at the second end of the respective heater element.

公开(公告)号：US20210166757A1

公开(公告)日：2021-06-03

申请号：US17099257

申请日：2020-11-16

Applicant: STMicroelectronics S.r.l.

Inventor： Giovanni Campardo ,  Massimo Borghi ,  Paola Zuliani ,  Marco Barboni

IPC: G11C13/00 ,  H01L45/00

Abstract: An embodiment phase-change memory device includes a memory array provided with a plurality of phase-change memory cells, each having a body made of phase-change material and a first state, in which the phase-change material is completely in an amorphous phase, and at least one second state, in which the phase-change material is partially in the amorphous phase and partially in a crystalline phase. A programming-pulse generator applies to the memory cells rectangular dynamic-programming pulses having an amplitude and a duration calibrated for switching the memory cells from the first state to the second state.